Invention Grant
US06367415B2 View port of a chemical vapor deposition device for manufacturing semiconductor devices
有权
用于制造半导体器件的化学气相沉积装置的视图
- Patent Title: View port of a chemical vapor deposition device for manufacturing semiconductor devices
- Patent Title (中): 用于制造半导体器件的化学气相沉积装置的视图
-
Application No.: US09800894Application Date: 2001-03-08
-
Publication No.: US06367415B2Publication Date: 2002-04-09
- Inventor: Tae-Hoon Kim , Byung-Chul Kim , Kwon Son , Bong-Soon Lim
- Applicant: Tae-Hoon Kim , Byung-Chul Kim , Kwon Son , Bong-Soon Lim
- Priority: KR00-45598 20000807
- Main IPC: C23C1452
- IPC: C23C1452

Abstract:
A view port of chemical vapor deposition apparatus for manufacturing semiconductor devices prevents heat loss in a chamber during a plasma deposition process. The view port includes a bracket protruding at the circumference of an opening in an electrode serving as a wall of a chamber of the apparatus, a transparent window pressed by the bracket against the wall via an O-ring, a pivoting cap for capping an opening in the bracket aligned with the window, and heat-insulative material and/or a heating element integral with the cap so as to be positioned close to the window when the cap is closed. The heating element can be a resistive heating wire or a warm air duct formed by a hose or the like. During the deposition process, the temperature of the window is maintained, thereby minimizing the tendency of polymer to adhere to the window.
Public/Granted literature
- US20020014203A1 View port of a chemical vapor deposition device for manufacturing semiconductor devices Public/Granted day:2002-02-07
Information query