发明授权
- 专利标题： Method of forming a semiconductor device using double endpoint detection
- 专利标题（中）： 使用双端点检测形成半导体器件的方法
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申请号： US09872636申请日： 2001-05-31
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公开(公告)号： US06376262B1公开(公告)日： 2002-04-23
- 发明人: Danielle Ki'ilani Kempa , Sandra Hyland
- 申请人： Danielle Ki'ilani Kempa , Sandra Hyland
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
An optical endpoint system controls the overetching of a semiconductor device by using double optical endpoint detection. With a complex spacer, the system monitors the chemistry change at both the top TEOS/nitride interface and the bottom nitride/TEOS interface. This double optical endpoint method reduces the possibility of overetching the layers regardless of the variations in the thickness of the incoming film or the etching characteristics of the etch chamber.