发明授权
US06387444B1 Single substrate processing CVD procedure for depositing a metal film using first and second CVD processes in first and second process chambers
有权
用于在第一和第二处理室中使用第一和第二CVD工艺沉积金属膜的单衬底处理CVD程序
- 专利标题： Single substrate processing CVD procedure for depositing a metal film using first and second CVD processes in first and second process chambers
- 专利标题（中）： 用于在第一和第二处理室中使用第一和第二CVD工艺沉积金属膜的单衬底处理CVD程序
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申请号： US09511698申请日： 2000-02-23
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公开(公告)号： US06387444B1公开(公告)日： 2002-05-14
- 发明人: Osamu Okada , Atsushi Sekiguchi
- 申请人： Osamu Okada , Atsushi Sekiguchi
- 优先权： JP10-92399 19980320
- 主分类号： C23C1606
- IPC分类号： C23C1606
摘要：
In the field of depositing a metal film for wiring purposes on a substrate by means of single-substrate processing CVD, a procedure for depositing a copper film on a substrate is carried out by utilizing a first CVD module in which film deposition is carried out under first film deposition conditions where the film deposition rate is low and the filling characteristics are good, and a second CVD module in which film deposition is carried out under second film deposition conditions where the film deposition rate is high and the filling characteristics are poor. One CVD film deposition process in which a metal film for wiring purposes is deposited is carried out with sub-processes based on two different sets of film deposition conditions.
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