公开(公告)号：US06743473B1

公开(公告)日：2004-06-01

申请号：US09505638

申请日：2000-02-16

申请人： Vijay D. Parkhe ,  Gilbert Hausmann ,  Jagadish Kalyanam

发明人： Vijay D. Parkhe ,  Gilbert Hausmann ,  Jagadish Kalyanam

IPC分类号： C23C1606

CPC分类号： H01L21/76843 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45561 ,  H01L21/28568 ,  H01L21/76856 ,  H01L21/76862

摘要： The present invention provides a method and precursor for forming a metal and/or metal nitride layer on the substrate by chemical vapor deposition. The organometallic precursor has the formula of (Cp(R)n)xMHy−x, where Cp is a cyclopentadienyl functional group, R is a substituent on the cyclopentadienyl functional group comprising an organic group having at least one carbon-silicon bond, n is an integer from 0 to 5, x is an integer from 1 to 4, M is a metal, and y is the valence of the metal M. A metal, metal nitride, metal carbon nitride, or metal silicon nitride film is deposited on a heated substrate by thermal or plasma enhanced decomposition of the organometallic precursor in the presence of a processing gas, such as hydrogen, nitrogen, ammonia, silane, and combinations thereof, at a pressure of less than about 20 Torr. By controlling the reactive gas composition either metal or metal nitride films may be deposited. The deposited metal or metal nitride film may then be exposed to a plasma to remove contaminants, densify the film, and reduce film resistivity.

摘要翻译： 本发明提供了通过化学气相沉积在基板上形成金属和/或金属氮化物层的方法和前体。 有机金属前体具有式（Cp（R）n）xMHy-x，其中Cp是环戊二烯基官能团，R是包含具有至少一个碳 - 硅键的有机基团的环戊二烯基官能团上的取代基，n是 0至5的整数，x是1至4的整数，M是金属，y是金属M的化合价。金属，金属氮化物，金属氮化物或金属氮化硅膜沉积在 在低于约20托的压力下，在加工气体例如氢气，氮气，氨，硅烷及其组合的存在下，通过热或等离子体增强分解有机金属前体来加热衬底。 通过控制反应性气体组成，可以沉积金属或金属氮化物膜。 然后将沉积的金属或金属氮化物膜暴露于等离子体以除去污染物，使膜致密化并降低膜电阻率。

公开(公告)号：US06548114B2

公开(公告)日：2003-04-15

申请号：US09907219

申请日：2001-07-17

申请人： Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

发明人： Sining Mao ,  Anthony M. Mack ,  Brenda A. Everitt ,  Edward S. Murdock ,  Zheng Gao

IPC分类号： C23C1606

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10S977/934 ,  Y10T29/49046

摘要： A method of fabricating a spin valve sensor includes sequentially depositing, without breaking vacuum, a seed layer and an antiferromagnetic layer. Sequentially depositing the seed layer and the antiferromagnetic layer includes depositing a seed layer on a substrate; depositing a Mn-alloy layer of the antiferromagnetic layer directly on top of the seed layer; and depositing a buffer layer of the antiferromagnetic layer directly on top of the Mn-alloy layer. The seed layer, the Mn-alloy layer and the buffer layer are annealed. After annealing, a portion of the buffer layer is etched and a synthetic antiferromagnetic layer is deposited on top of the buffer layer. A spacer layer is deposited on top of the synthetic antiferromagnetic layer, and a free layer is deposited on top of the spacer layer.

摘要翻译： 制造自旋阀传感器的方法包括在不破坏真空的情况下依次沉积种子层和反铁磁性层。 顺序地沉积种子层和反铁磁性层包括将种子层沉积在基底上; 将反铁磁层的Mn合金层直接沉积在种子层的顶部; 并将反铁磁层的缓冲层直接沉积在Mn合金层的顶部上。 种子层，Mn合金层和缓冲层退火。 在退火之后，缓冲层的一部分被蚀刻，并且合成的反铁磁层沉积在缓冲层的顶部上。 间隔层沉积在合成反铁磁性层的顶部上，并且自由层沉积在间隔层的顶部上。

公开(公告)号：US06537613B1

公开(公告)日：2003-03-25

申请号：US09546867

申请日：2000-04-10

申请人： Yoshihide Senzaki ,  Arthur Kenneth Hochberg ,  John Anthony Thomas Norman

发明人： Yoshihide Senzaki ,  Arthur Kenneth Hochberg ,  John Anthony Thomas Norman

IPC分类号： C23C1606

CPC分类号： C23C16/52 ,  C23C16/029

摘要： A process for deposition of a multiple metal and metalloid compound layer with a compositional gradient of the metal and metalloid in the layer on a substrate of an electronic material, comprising: a) providing two or more metal-ligand and metalloid-ligand complex precursors, wherein the ligands are preferably the same; b) delivering the precursors to a deposition zone where the substrate is located; c) contacting the substrate under deposition conditions with the precursors; d) varying the temperature of deposition from a first temperature to a second distinct temperature which is at least 40° C. from said first temperature during the contact, and e) depositing a multiple metal and metalloid compound layer on the substrate from the precursors resulting in the compositional gradient of the metal and metalloid in the layer as a result of step d). An oxygen source can be added to result in a metal-metalloid oxide, or a nitrogen source can be added to result in a metal-metalloid nitride, or a mixture of an oxygen and a nitrogen source can be added to result in a metal-metalloid oxynitride. The metalloid would preferably be silicon.

摘要翻译： 一种用于在电子材料的基底上的层中沉积具有金属和准金属的组成梯度的多金属和准金属化合物层的方法，包括：a）提供两种或更多种金属 - 配体和准金属 - 配体复合物前体， 其中配体优选相同; b）将前体输送到基底所在的沉积区; c）在沉积条件下将基材与前体接触; d）在接触期间将沉积温度从第一温度变化到与所述第一温度至少40℃的第二不同温度，以及e）从所述前体沉积多个金属和准金属化合物层到所述衬底上， 在层中的金属和准金属的组成梯度中作为步骤d）的结果。 可以加入氧源以产生金属 - 类金属氧化物，或者可以加入氮源以产生金属 - 准金属氮化物，或者可以加入氧和氮源的混合物以产生金属 - 准金属氧氮化物 准金属将优选为硅。

公开(公告)号：US06444264B2

公开(公告)日：2002-09-03

申请号：US09774262

申请日：2001-01-30

申请人： Frank S. Hintermaier ,  Thomas H. Baum

发明人： Frank S. Hintermaier ,  Thomas H. Baum

IPC分类号： C23C1606

CPC分类号： C23C16/448 ,  C23C16/18 ,  C23C16/40

摘要： A solvent composition for liquid delivery chemical vapor deposition of metal organic precursors, to form metal-containing films such as SrBi2Ta2O9 (SBT) films for memory devices. An SBT film may be formed using precursors such as Sr(thd)2(tetraglyme), Ta(OiPr)4(thd) and Bi(thd)3 which are dissolved in a solvent medium comprising one or more alkanes. Specific alkane solvent compositions may advantageously used for MOCVD of metal organic compound(s) such as &bgr;-diketonate compounds or complexes, compound(s) including alkoxide ligands, and compound(s) including alkyl and/or aryl groups at their outer (molecular) surface, or compound(s) including other ligand coordination species and specific metal constituents.

摘要翻译： 用于液体输送化学气相沉积金属有机前体的溶剂组合物，以形成含金属的膜，例如用于存储器件的SrBi2Ta2O9（SBT）膜。 可以使用溶解在包含一种或多种烷烃的溶剂介质中的前体如Sr（thd）2（四甘醇二甲醚），Ta（OiPr）4（thd）和Bi（thd）3）形成SBT膜。 特定的烷烃溶剂组合物可有利地用于金属有机化合物如β-二酮化合物或络合物的MOCVD，包括烷氧基配体的化合物和在其外部的包括烷基和/或芳基的化合物（分子 ）表面或包括其它配体配位物质和特定金属成分的化合物。

公开(公告)号：US06248401B1

公开(公告)日：2001-06-19

申请号：US08846080

申请日：1997-04-25

申请人： Shiuh-Kao Chiang ,  Mary K. Prokop ,  Tibor Kalnoki-Kis

发明人： Shiuh-Kao Chiang ,  Mary K. Prokop ,  Tibor Kalnoki-Kis

IPC分类号： C23C1606

CPC分类号： C23C14/5806 ,  C23C14/024 ,  C23C14/16 ,  C23C14/58 ,  C23C28/00 ,  H05K1/09 ,  H05K3/022 ,  H05K3/386 ,  H05K3/388 ,  H05K3/389 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2203/0278 ,  Y10T428/12431 ,  Y10T428/12493 ,  Y10T428/12569 ,  Y10T428/12611

摘要： This invention relates to a metal body having at least one vapor-deposited treatment layer overlying and adhered to at least one side of the metal body, and a layer of adhesion-promoting material overlying and adhered to at least one treatment layer, provided that when two treatment layers are deposited on one side of the body and the first layer is vapor-deposited zinc, the second layer is not vapor-deposited silica or alumina, said adhesion-promoting material being suitable for enhancing adhesion between said body and another substrate. The invention also relates to laminates comprising metal foils and at least one vapor-deposited treatment layer overlying and adhered to at least one side of the metal foil; a layer of adhesion-promoting material overlying and adhered to at least one vapor-deposited treatment layer; and a layer of an electrically non-conductive material overlying and adhered to the adhesion-promoting layer.

摘要翻译： 本发明涉及一种具有至少一个气相沉积处理层的金属体，该处理层覆盖并粘附到金属体的至少一侧，以及一层粘附促进材料层，其覆盖并粘附至至少一个处理层，条件是当 两个处理层沉积在主体的一侧上，第一层是气相沉积的锌，第二层不是气相沉积的二氧化硅或氧化铝，所述粘附促进材料适于增强所述主体和另一基板之间的粘附。 本发明还涉及包含金属箔和覆盖并粘附在金属箔的至少一侧上的至少一个气相沉积处理层的层压体; 一层粘附促进材料，覆盖并粘附在至少一个气相沉积处理层上; 以及覆盖并粘合到粘附促进层上的非导电材料层。

公开(公告)号：US06793968B1

公开(公告)日：2004-09-21

申请号：US09914839

申请日：2001-09-04

申请人： Helge Reymann

发明人： Helge Reymann

IPC分类号： C23C1606

CPC分类号： C23C4/18 ,  C23C4/137 ,  Y02T50/67

摘要： A method includes coating a product with a metallic coating, in particular a high-temperature component product of a gas turbine, in a vacuum plant. An apparatus coats the product with a metallic coating in a vacuum plant, having a coating chamber and a postheat treatment chamber. Novel process control with regard to a temperature profile, in particular after the application of the metallic coating to the product and before the postheat treatment, involves the ensuring of a minimum temperature at all times, this minimum temperature being relatively higher than room temperature.

摘要翻译： 一种方法包括在真空设备中用金属涂层，特别是燃气轮机的高温组分产品涂覆产品。 设备在真空设备中用金属涂层涂覆产品，具有涂覆室和后热处理室。 关于温度曲线的新颖的过程控制，特别是在将金属涂层施加到产品之后和在后加热处理之后，涉及到始终保证最低温度，该最低温度相对高于室温。

公开(公告)号：US06767581B2

公开(公告)日：2004-07-27

申请号：US10034053

申请日：2001-12-20

申请人： Annette Saenger

发明人： Annette Saenger

IPC分类号： C23C1606

CPC分类号： C23C16/42 ,  C23C16/345

摘要： A process for the deposition of thin layers by chemical vapor deposition includes adding an effective amount of nitroxyl radicals of the formula to a gas stream including the materials to be deposited. In this formula, R1 and R2 are identical or different alkyl, alkenyl, alkynyl, acyl, or aryl radicals, with or without heteroatoms. R1 and R2 can also together form a structure —CR3R4—CR5R6—CR7R8—CR9R10—CR11R12—, where R3, R4, R5, R6, R7, R8, R9, R10, R11, R12 are again identical or different alkyl, alkenyl, alkynyl, acyl, or aryl radicals, with or without heteroatoms.

摘要翻译： 通过化学气相沉积沉积薄层的方法包括加入有效量的包含待沉积材料的气流的制剂的硝酰基。 在该式中，R 1和R 2是具有或不具有杂原子的相同或不同的烷基，烯基，炔基，酰基或芳基。 R 1和R 2也可以一起形成结构-CR 3 R 4 -CR 5 R 6 -CR 7 R 8 -CR 9 R 10 -CR 11 R 12 - ，其中R 3，R 4，R 5，R 6，R 7，R 8，R 9，R 10，R 11，R 12是相同或不同的烷基，烯基， 炔基，酰基或芳基，具有或不具有杂原子。

公开(公告)号：US06403156B2

公开(公告)日：2002-06-11

申请号：US09883581

申请日：2001-06-18

申请人： Hyuk Kyoo Jang ,  Chan Lim

发明人： Hyuk Kyoo Jang ,  Chan Lim

IPC分类号： C23C1606

CPC分类号： C23C16/45534 ,  C23C16/403 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616

摘要： A method is disclosed for forming an aluminum oxide film on a semiconductor device. In a process of depositing an aluminum oxide film by atomic layer deposition method using TMA (trimethyl aluminum; Al(CH3)3) as an aluminum source and H2O as an oxygen reaction gas, the disclosed method supplies a NH3 reaction gas at the same time when an aluminum source is supplied. Therefore, it can increase the growth rate of an aluminum oxide film and can also improve the characteristic of preventing penetration of hydrogen into an underlying layer or a semiconductor substrate. Thus, the disclosed method can prevent degradation in a charge storage characteristic in a capacitor and lower in an electrical characteristic of various elements, thus improving an overall characteristic of a semiconductor device.

摘要翻译： 公开了一种在半导体器件上形成氧化铝膜的方法。 在使用TMA（三甲基铝; Al（CH 3）3）作为铝源和作为氧反应气体的H 2 O的原子层沉积法沉积氧化铝膜的过程中，所公开的方法同时提供NH 3反应气体 当提供铝源时。 因此，可以提高氧化铝膜的生长速度，并且还可以提高防止氢气渗透到下层或半导体衬底中的特性。 因此，所公开的方法可以防止电容器中的电荷存储特性的劣化，并且可以降低各种元件的电特性，从而提高半导体器件的整体特性。

公开(公告)号：US06399152B1

公开(公告)日：2002-06-04

申请号：US09695509

申请日：2000-10-24

申请人： Gary D. Goodrich

发明人： Gary D. Goodrich

IPC分类号： C23C1606

CPC分类号： B05D5/068 ,  C23C14/025 ,  C23C14/165 ,  C23C28/00

摘要： A vacuum metalization process for applying a chrome coating on aluminum and steel substrates, for example vehicle wheels, hub caps, bumpers and the like. The process is environmentally compatible and produces a decorative, wear-resistant chrome finish and comprises four stages: a cleaning or preparation stage, a base coat application stage, a two-step PVD stage, and a topcoat application stage. The surface of the substrate is prepared and pretreated to provide a surface congenial for the adhesion of the base coat and to eliminate any contamination. An organic epoxy, thermosetting powder base coat is applied to smooth the surface to a glass-like finish and to ensure adhesion of the metal coatings. A two part metal coating is then applied via a PVD process, consisting of a Ni/Cr base and a Cr layer. A protective acrylic, thermosetting topcoat is then applied to protect the metal coating layers.

摘要翻译： 用于在铝和钢基材上涂覆铬涂层的真空金属化方法，例如车轮，轮毂盖，保险杠等。 该工艺是环境兼容的，并且产生装饰性耐磨铬镀层，并且包括四个阶段：清洁或制备阶段，底涂层施用阶段，两步PVD阶段和面漆涂布阶段。 制备基材的表面并进行预处理，以提供与底涂层粘合相适应的表面，并消除任何污染。 使用有机环氧树脂，热固性粉末底涂层将表面平滑至玻璃状涂层并确保金属涂层的粘附。 然后通过由Ni / Cr基和Cr层组成的PVD工艺施加两部分金属涂层。 然后施加保护性丙烯酸，热固性顶涂层以保护金属涂层。

公开(公告)号：US06288367B1

公开(公告)日：2001-09-11

申请号：US09626656

申请日：2000-07-27

申请人： Karl M. Robinson ,  David L. Chapek

发明人： Karl M. Robinson ,  David L. Chapek

IPC分类号： C23C1606

CPC分类号： F27B17/00

摘要： A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source. In a preferred embodiment, the structure is a hermetically-sealable chamber which can be pressurized or evacuated. The articles, which may be semiconductor wafers, are positioned on the rotating structure such that the surface to be reflowed faces both the heat source and the structure's rotational axis. In the case of circular semiconductor wafers, the wafers are positioned such that the planar surface of each wafer is centered on and perpendicular to a radius of the cylindrical chamber. By performing the reflow operation while the chamber is spinning, high pseudo-gravitational forces can be generated which aid in planarization, void elimination, densification and in the filling of small aspect ratio contact via openings.