发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US09566735申请日: 2000-05-09
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公开(公告)号: US06387737B1公开(公告)日: 2002-05-14
- 发明人: Shunpei Yamazaki , Hideaki Kuwabara , Yasuyuki Arai
- 申请人: Shunpei Yamazaki , Hideaki Kuwabara , Yasuyuki Arai
- 优先权: JP2000-064227 20000308
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
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