Invention Grant
US06387740B1 Tri-layer process for forming TFT matrix of LCD with reduced masking steps
有权
用于以降低的掩蔽步骤形成LCD的TFT矩阵的三层工艺
- Patent Title: Tri-layer process for forming TFT matrix of LCD with reduced masking steps
- Patent Title (中): 用于以降低的掩蔽步骤形成LCD的TFT矩阵的三层工艺
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Application No.: US09627142Application Date: 2000-07-24
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Publication No.: US06387740B1Publication Date: 2002-05-14
- Inventor: Tean-Sen Jen , Jia-Shyong Cheng
- Applicant: Tean-Sen Jen , Jia-Shyong Cheng
- Priority: TW88113830 19990812
- Main IPC: H01L2100
- IPC: H01L2100

Abstract:
A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.
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