Invention Grant
US06387740B1 Tri-layer process for forming TFT matrix of LCD with reduced masking steps 有权
用于以降低的掩蔽步骤形成LCD的TFT矩阵的三层工艺

  • Patent Title: Tri-layer process for forming TFT matrix of LCD with reduced masking steps
  • Patent Title (中): 用于以降低的掩蔽步骤形成LCD的TFT矩阵的三层工艺
  • Application No.: US09627142
    Application Date: 2000-07-24
  • Publication No.: US06387740B1
    Publication Date: 2002-05-14
  • Inventor: Tean-Sen JenJia-Shyong Cheng
  • Applicant: Tean-Sen JenJia-Shyong Cheng
  • Priority: TW88113830 19990812
  • Main IPC: H01L2100
  • IPC: H01L2100
Tri-layer process for forming TFT matrix of LCD with reduced masking steps
Abstract:
A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.
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