发明授权
- 专利标题: Process for reclaiming wafer substrates
- 专利标题(中): 回收晶圆基板的工艺
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申请号: US09630316申请日: 2000-07-31
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公开(公告)号: US06406923B1公开(公告)日: 2002-06-18
- 发明人: Hidetoshi Inoue , Satoru Takada , Yoshihiro Hara
- 申请人: Hidetoshi Inoue , Satoru Takada , Yoshihiro Hara
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.
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