发明授权
US06410419B1 Silicon carbide barrier layers for porous low dielectric constant materials
有权
用于多孔低介电常数材料的碳化硅阻挡层
- 专利标题： Silicon carbide barrier layers for porous low dielectric constant materials
- 专利标题（中）： 用于多孔低介电常数材料的碳化硅阻挡层
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申请号： US09633241申请日： 2000-08-07
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公开(公告)号： US06410419B1公开(公告)日： 2002-06-25
- 发明人: Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
- 申请人： Sailesh Mansinh Merchant , Sudhanshu Misra , Pradip Kumar Roy
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.
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