-
公开(公告)号：US06458289B1
公开(公告)日：2002-10-01
申请号：US09413742
申请日：1999-10-06
IPC分类号： C09K1300
CPC分类号： H01L21/3212
摘要： A CMP slurry includes a first emulsion having a continuous aqueous phase and a second emulsion. The first emulsion includes abrasive particles, and the second emulsion captures metal particles polished from the semiconductor wafer. Thus, metal particles can be removed from the slurry during CMP to avoid damaging and/or contaminating the semiconductor wafer.
摘要翻译： CMP浆料包括具有连续水相和第二乳液的第一乳液。 第一乳液包括研磨颗粒，第二乳液捕获从半导体晶片抛光的金属颗粒。 因此，在CMP期间可以从浆料中除去金属颗粒，以避免损坏和/或污染半导体晶片。
-
2.发明授权Polishing fluid polishing method semiconductor device and semiconductor device fabrication method 有权抛光液抛光法半导体器件及半导体器件制造方法公开(公告)号：US06375541B1
公开(公告)日：2002-04-23
申请号：US09483576
申请日：2000-01-14
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译： 包括分布有机相和连续水相的抛光液。 分布相具有至少一种络合剂，水相中分散有磨料颗粒。 在抛光过程中产生的反应产物与络合剂相互作用形成有机金属络合物。 进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。
-
公开(公告)号：US6100587A
公开(公告)日：2000-08-08
申请号：US383753
申请日：1999-08-26
IPC分类号： H01L21/768 , H07L23/485 , H01L21/4763
CPC分类号： H01L21/76831
摘要： Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.
-
4.发明授权Colloidal suspension of abrasive particles containing magnesium as CMP slurry 有权含有镁的磨料颗粒的胶体悬浮液作为CMP浆料公开(公告)号：US06319095B1
公开(公告)日：2001-11-20
申请号：US09521768
申请日：2000-03-09
IPC分类号： B24B100
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02
摘要： An improved colloidal slurry for chemical mechanical polishing and methods of polishing using the improved colloidal slurry.
摘要翻译： 用于化学机械抛光的改进的胶体浆料和使用改进的胶体浆料的抛光方法。
-
5.发明授权Polishing fluid, polishing method, semiconductor device and semiconductor device fabrication method 有权抛光液，抛光法，半导体器件及半导体器件的制造方法公开(公告)号：US06458016B2
公开(公告)日：2002-10-01
申请号：US09894116
申请日：2001-06-28
IPC分类号： B24B2118
CPC分类号： B24B37/005 , B24B37/044 , C09G1/02
摘要： A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要翻译： 包括分布有机相和连续水相的抛光液。 分布相具有至少一种络合剂，水相中分散有磨料颗粒。 在抛光过程中产生的反应产物与络合剂相互作用形成有机金属络合物。 进一步公开了一种利用抛光液的抛光方法，半导体器件和半导体器件制造方法。
-
公开(公告)号：US06368200B1
公开(公告)日：2002-04-09
申请号：US09516836
申请日：2000-03-02
IPC分类号： B24D1100
CPC分类号： B24B37/24
摘要： A polishing pad formed from closed-cell elastomer foam includes a population of bubbles within the pad. As the pad wears due to polishing and the polishing surface recedes, the freshly formed polishing surface includes pores formed of the newly exposed bubbles. The pores receive and retain polishing slurry and aid in the chemical mechanical polishing process. Pad conditioning is not required because new pores are constantly being created at the pad surface as the surface recedes during polishing. The method for forming the polishing pad includes the injection of gas bubbles into the viscous elastomer material used to form the pad. Process conditions are chosen to maintain gas bubbles within the elastomer material during the curing and solidifying process steps.
摘要翻译： 由闭孔弹性体泡沫形成的抛光垫包括垫内的气泡群。 当由于抛光而抛光垫磨损并且抛光表面后退时，新形成的抛光表面包括由新露出的气泡形成的孔。 孔隙接收和保留抛光浆料并有助于化学机械抛光过程。 不需要衬垫调节，因为在抛光期间表面后退时，在衬垫表面上不断产生新的孔。 用于形成抛光垫的方法包括将气泡注入用于形成垫的粘性弹性体材料中。 选择工艺条件以在固化和固化过程步骤期间保持弹性体材料内的气泡。
-
7.发明授权Method of forming in-situ electroplated oxide passivating film for corrosion inhibition 失效形成原位电镀氧化钝化膜的方法进行腐蚀抑制公开(公告)号：US06524957B2
公开(公告)日：2003-02-25
申请号：US09953706
申请日：2001-09-17
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/76834 , H01L21/7684 , H01L21/76888 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method an apparatus for making copper metallic interconnects for semiconductors having an oxide layer deposited in the copper in situ during the deposition of the copper within the via.
摘要翻译： 一种用于制造用于半导体的铜金属互连的装置，该铜金属互连件在铜在通孔内沉积期间具有在原位沉积在铜中的氧化物层。
-
8.发明授权CMP system and slurry for polishing semiconductor wafers and related method 有权CMP系统和用于抛光半导体晶片的浆料及相关方法公开(公告)号：US06364744B1
公开(公告)日：2002-04-02
申请号：US09496829
申请日：2000-02-02
IPC分类号： B24B4900
CPC分类号： B24B37/04 , B24B57/02 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing (CMP) system includes a polishing device including a polishing article. The polishing device provides relative movement between the semiconductor wafer and the polishing article with a slurry therebetween. The slurry preferably includes abrasive particles and a photocatalyst to enhance oxidation of metal of the semiconductor wafer. The slurry may also include water and the photocatalyst is a mixed metal oxide for breaking down water into hydrogen and oxygen in the presence of light.
摘要翻译： 化学机械抛光（CMP）系统包括包括抛光制品的抛光装置。 抛光装置提供半导体晶片和抛光制品之间的相对运动，其间具有浆料。 该浆料优选包括研磨颗粒和光催化剂以增强半导体晶片的金属的氧化。 浆料还可以包括水，光催化剂是用于在光存在下将水分解成氢和氧的混合金属氧化物。
-
公开(公告)号：US06287970B1
公开(公告)日：2001-09-11
申请号：US09370912
申请日：1999-08-06
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , H01L21/321 , H01L21/76886
摘要： A method of making a semiconductor device includes the steps of forming an oxide layer adjacent a semiconductor substrate, etching trenches within the oxide layer, depositing a copper layer to at least fill the etched trenches, and forming a copper arsenate layer on the deposited copper layer. The copper arsenate layer is then chemically mechanically polished. The copper layer may be deposited by at least one of electrodeposition, electroplating and chemical vapor deposition. The copper arsenate layer on the surface of the deposited copper layer inhibits oxidation and corrosion and stabilizes the microstructure of the deposited copper layer to thereby eliminate a need to subsequently anneal the deposited copper layer.
摘要翻译： 制造半导体器件的方法包括以下步骤：在半导体衬底附近形成氧化物层，蚀刻氧化物层内的沟槽，沉积铜层以至少填充蚀刻的沟槽，以及在沉积的铜层上形成砷酸铜层 。 然后将砷酸铜层化学机械抛光。 可以通过电沉积，电镀和化学气相沉积中的至少一种来沉积铜层。 沉积的铜层表面上的砷酸铜层抑制氧化和腐蚀并稳定沉积的铜层的微观结构，从而不需要随后退火沉积的铜层。
-
10.发明授权Chemical mechanical polishing composition and method of polishing metal layers using same 有权化学机械抛光组合物及使用其研磨金属层的方法公开(公告)号：US06599837B1
公开(公告)日：2003-07-29
申请号：US09515730
申请日：2000-02-29
IPC分类号： H01L21302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212
摘要： The present invention provides a chemical mechanical planarization (CMP) polishing composition that polishes metal layers at a good removal rate and that provides good planarization of metal layers in a process that can be readily controlled. The CMP polishing composition of the present composition includes a plurality of abrasive particles, a triazole or a triazole derivative, a ferricyanide salt oxidizing agent and water and has a pH of from about 1 to about 6. In addition, the present invention includes a method for removing at least a portion of a metallization layer by polishing a metallization layer using the CMP polishing composition of the invention.
摘要翻译： 本发明提供了一种化学机械平面化（CMP）抛光组合物，其以良好的去除速率抛光金属层并且在易于控制的工艺中提供良好的金属层平面化。 本发明组合物的CMP抛光组合物包括多个研磨颗粒，三唑或三唑衍生物，铁氰化物盐氧化剂和水，并且其pH为约1至约6.另外，本发明包括一种方法 用于通过使用本发明的CMP抛光组合物抛光金属化层来去除至少一部分金属化层。
-
-
-
-
-
-
-
-
-
搜索结果
52 条记录 (耗时 0.017 秒)