摘要:
A method an apparatus for making copper metallic interconnects for semiconductors having an oxide layer deposited in the copper in situ during the deposition of the copper within the via.
摘要:
A chemical mechanical polishing (CMP) system includes a polishing device including a polishing article. The polishing device provides relative movement between the semiconductor wafer and the polishing article with a slurry therebetween. The slurry preferably includes abrasive particles and a photocatalyst to enhance oxidation of metal of the semiconductor wafer. The slurry may also include water and the photocatalyst is a mixed metal oxide for breaking down water into hydrogen and oxygen in the presence of light.
摘要:
A method of making a semiconductor device includes the steps of forming an oxide layer adjacent a semiconductor substrate, etching trenches within the oxide layer, depositing a copper layer to at least fill the etched trenches, and forming a copper arsenate layer on the deposited copper layer. The copper arsenate layer is then chemically mechanically polished. The copper layer may be deposited by at least one of electrodeposition, electroplating and chemical vapor deposition. The copper arsenate layer on the surface of the deposited copper layer inhibits oxidation and corrosion and stabilizes the microstructure of the deposited copper layer to thereby eliminate a need to subsequently anneal the deposited copper layer.
摘要:
A CMP slurry includes a first emulsion having a continuous aqueous phase and a second emulsion. The first emulsion includes abrasive particles, and the second emulsion captures metal particles polished from the semiconductor wafer. Thus, metal particles can be removed from the slurry during CMP to avoid damaging and/or contaminating the semiconductor wafer.
摘要:
A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要:
Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.
摘要:
A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.
摘要:
A polishing pad formed from closed-cell elastomer foam includes a population of bubbles within the pad. As the pad wears due to polishing and the polishing surface recedes, the freshly formed polishing surface includes pores formed of the newly exposed bubbles. The pores receive and retain polishing slurry and aid in the chemical mechanical polishing process. Pad conditioning is not required because new pores are constantly being created at the pad surface as the surface recedes during polishing. The method for forming the polishing pad includes the injection of gas bubbles into the viscous elastomer material used to form the pad. Process conditions are chosen to maintain gas bubbles within the elastomer material during the curing and solidifying process steps.
摘要:
The present invention provides a chemical mechanical planarization (CMP) polishing composition that polishes metal layers at a good removal rate and that provides good planarization of metal layers in a process that can be readily controlled. The CMP polishing composition of the present composition includes a plurality of abrasive particles, a triazole or a triazole derivative, a ferricyanide salt oxidizing agent and water and has a pH of from about 1 to about 6. In addition, the present invention includes a method for removing at least a portion of a metallization layer by polishing a metallization layer using the CMP polishing composition of the invention.