发明授权
- 专利标题: Semiconductor circuit preventing electromagnetic noise
- 专利标题(中): 半导体电路防止电磁噪声
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申请号: US09639801申请日: 2000-08-17
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公开(公告)号: US06414370B1公开(公告)日: 2002-07-02
- 发明人: Masahiro Nagasu , Hideo Kobayashi , Hideki Miyazaki , Shin Kimura , Junichi Sakano , Mutsuhiro Mori
- 申请人: Masahiro Nagasu , Hideo Kobayashi , Hideki Miyazaki , Shin Kimura , Junichi Sakano , Mutsuhiro Mori
- 优先权: JP7-122117 19950522; JP7-241233 19950920
- 主分类号: H01L27082
- IPC分类号: H01L27082
摘要:
A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows for values of a voltage equal to or greater than a first voltage value but equal to or smaller than a second voltage value, whereas a current abruptly flows for values of a voltage greater than the second voltage value. Due to the current-voltage characteristic, energy accumulated in an inductance provided within the circuit is consumed by a differential resistance of the semiconductor circuit or a semiconductor, thereby preventing the occurrence of the electromagnetic noise and an excessively large voltage.
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