- 专利标题： Semiconductor device having a multilayer interconnection structure
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申请号： US09274976申请日： 1999-03-23
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公开(公告)号： US06417116B2公开(公告)日： 2002-07-09
- 发明人: Hiroshi Kudo , Masanobu Ikeda , Kenichi Watanabe , Yoshiyuki Ohkura
- 申请人： Hiroshi Kudo , Masanobu Ikeda , Kenichi Watanabe , Yoshiyuki Ohkura
- 优先权： JP10-075938 19980324
- 主分类号： H01L2130
- IPC分类号： H01L2130
摘要：
A semiconductor device includes a multilayer interconnection structure including an organic interlayer insulation film in which a conductor pattern is formed by a damascene process, wherein the organic interlayer insulation film carries thereon an organic spin-on-glass film.
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