公开(公告)号：US20080305645A1

公开(公告)日：2008-12-11

申请号：US12219271

申请日：2008-07-18

申请人： Ken Sugimoto ,  Yoshiyuki Ohkura ,  Hirofumi Watatani ,  Tamotsu Owada ,  Shunn-ichi Fukuyama

发明人： Ken Sugimoto ,  Yoshiyuki Ohkura ,  Hirofumi Watatani ,  Tamotsu Owada ,  Shunn-ichi Fukuyama

IPC分类号： H01L21/302

CPC分类号： H01L21/76829 ,  H01L21/76808

摘要： A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.

摘要翻译： 公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。 该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，通过在层间绝缘膜上使用SiH 4气体和CO 2气体通过CVD形成氧化硅膜的步骤，形成 化学放大抗蚀剂膜覆盖氧化硅膜，以及在要形成垂直布线部分的化学放大抗蚀剂膜上的位置形成第一开口的步骤。

公开(公告)号：US20070246158A1

公开(公告)日：2007-10-25

申请号：US11408373

申请日：2006-04-21

申请人： Hideo Yamazaki ,  Yoshiyuki Ohkura ,  Nathan Kreutter ,  Shoji Takeuchi

发明人： Hideo Yamazaki ,  Yoshiyuki Ohkura ,  Nathan Kreutter ,  Shoji Takeuchi

IPC分类号： B32B3/00

CPC分类号： H05K3/325 ,  H05K3/244 ,  H05K3/305 ,  H05K2201/10977 ,  H05K2203/0307 ,  H05K2203/1189 ,  Y10T428/24917

摘要： The present invention provides a wiring board capable of realizing electrical connectivity even with connection leads having a fine pitch of 100 μm or less. The present invention relates to a wiring board with adhesive film comprising: a wiring board, in which the surface of a connection terminal portion on the end of a connection lead on the wiring board has a non-flat shape formed by a plating method; and, an adhesive film that covers the surface of the connection terminal portion and contains either a thermoplastic resin or a thermoplastic, thermosetting resin.

摘要翻译： 本发明提供一种能够实现电连接性的布线板，即使是具有100μm以下的细间距的连接引线。 本发明涉及一种具有粘合膜的布线板，包括：布线板，其中布线板上的连接引线端部上的连接端子部分的表面具有通过镀覆方法形成的非平坦形状; 以及覆盖连接端子部的表面并且包含热塑性树脂或热塑性热固性树脂的粘合膜。

公开(公告)号：US20070123035A1

公开(公告)日：2007-05-31

申请号：US11358715

申请日：2006-02-22

申请人： Ken Sugimoto ,  Yoshiyuki Ohkura ,  Hirofumi Watatani ,  Tamotsu Owada ,  Shunn-ichi Fukuyama

发明人： Ken Sugimoto ,  Yoshiyuki Ohkura ,  Hirofumi Watatani ,  Tamotsu Owada ,  Shunn-ichi Fukuyama

IPC分类号： H01L21/4763 ,  H01L21/473

CPC分类号： H01L21/76829 ,  H01L21/76808

摘要： A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.

摘要翻译： 公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。 该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，使用SiH 4气体和CO 2通过CVD形成氧化硅膜的步骤 层间绝缘膜上的气体，形成化学放大抗蚀剂膜以覆盖氧化硅膜的步骤，以及在化学放大型抗蚀剂膜上形成第一开口的步骤，其中垂直布线部分为 要形成

公开(公告)号：US20060205193A1

公开(公告)日：2006-09-14

申请号：US11220591

申请日：2005-09-08

申请人： Ken Sugimoto ,  Yoshiyuki Ohkura ,  Hirofumi Watatani ,  Tamotsu Owada ,  Kengo Inoue

发明人： Ken Sugimoto ,  Yoshiyuki Ohkura ,  Hirofumi Watatani ,  Tamotsu Owada ,  Kengo Inoue

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/02167 ,  C23C16/0227 ,  C23C16/325 ,  H01L21/3148 ,  H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76867

摘要： The method for forming an SiC-based film comprises the step of generating NH3 plasma on the surface of a substrate 20 in a chamber to make NH3 plasma processing on the substrate 20, the step of removing reaction products containing nitrogen remaining in the chamber, and the step of forming an SiC film 34 on the substrate 20 by PECVD.

摘要翻译： 形成SiC基膜的方法包括在室中的衬底20的表面上产生NH 3等离子体以在衬底上进行NH 3等离子体处理的步骤 20，除去残留在室内的含有氮的反应产物的步骤，以及通过PECVD在基板20上形成SiC膜34的步骤。

公开(公告)号：US06218318B1

公开(公告)日：2001-04-17

申请号：US09018855

申请日：1998-02-04

申请人： Yoshiyuki Ohkura ,  Hideki Harada

发明人： Yoshiyuki Ohkura ,  Hideki Harada

IPC分类号： H07L214163

CPC分类号： H01L21/76828 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/7682 ,  H01L21/76826 ,  H01L2221/1047 ,  Y10S148/081

摘要： A semiconductor device includes a porous interlayer insulation film including therein a stacking of SiO2 particles having a diameter in the range between about 5 nm and about 50 nm and stacked so as to form a void between adjacent particles, wherein the interlayer insulation film has a porosity in the range between about 13% and about 42%.

摘要翻译： 一种半导体器件包括多孔层间绝缘膜，其中包括直径在约5nm至约50nm范围内的SiO 2颗粒的堆叠层叠以便在相邻颗粒之间形成空隙，其中层间绝缘膜具有孔隙率 在约13％至约42％的范围内。

公开(公告)号：US08772182B2

公开(公告)日：2014-07-08

申请号：US12774302

申请日：2010-05-05

申请人： Yoshiyuki Ohkura

发明人： Yoshiyuki Ohkura

IPC分类号： H01L21/00

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device manufacture method has the steps of: (a) coating a low dielectric constant low-level insulating film above a semiconductor substrate formed with a plurality of semiconductor elements; (b) processing the low-level insulating film to increase a mechanical strength of the low-level insulating film; (c) coating a low dielectric constant high-level insulating film above the low-level insulating film; and (d) forming a buried wiring including a wiring pattern in the high-level insulating film and a via conductor in the low-level insulating film. The low-level insulating film and high-level insulating film are made from the same material. The process of increasing the mechanical strength includes an ultraviolet ray irradiation process or a hydrogen plasma applying process.

摘要翻译： 半导体器件制造方法的步骤为：（a）在形成有多个半导体元件的半导体衬底上涂覆低介电常数低电平绝缘膜; （b）处理低级绝缘膜以增加低级绝缘膜的机械强度; （c）在低级绝缘膜之上涂覆低介电常数高级绝缘膜; 以及（d）在高级绝缘膜中形成包括布线图案的掩埋布线和低级绝缘膜中的通路导体。 低级绝缘膜和高级绝缘膜由相同的材料制成。 增加机械强度的过程包括紫外线照射过程或氢等离子体施加过程。

公开(公告)号：US20090321015A1

公开(公告)日：2009-12-31

申请号：US12304577

申请日：2007-06-18

申请人： Kohichiro Kawate ,  Hitoshi Yamaguchi ,  Noriko Kikuchi ,  Tomihiro Hara ,  Yoshiyuki Ohkura

发明人： Kohichiro Kawate ,  Hitoshi Yamaguchi ,  Noriko Kikuchi ,  Tomihiro Hara ,  Yoshiyuki Ohkura

IPC分类号： B32B7/12 ,  C08K5/3445

CPC分类号： C08K5/5442 ,  C08G65/336 ,  C08G2650/56 ,  C08L33/06 ,  C08L63/00 ,  C08L71/12 ,  C08L81/06 ,  C08L2666/22 ,  C09J171/00 ,  H01L24/83 ,  H01L2224/2929 ,  H01L2224/2939 ,  H01L2224/83851 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/09701 ,  H05K3/305 ,  H05K3/321 ,  H05K3/361 ,  H05K2201/0212 ,  Y02P70/613 ,  H01L2924/0665 ,  H01L2924/00014 ,  H01L2924/00

摘要： To provide an adhesive composition which can exhibit high adhesion to a circuit board and also has ability capable of releasing the connection to the circuit board connected and reconnecting the circuit board (repairing properties). An adhesive composition comprising: (i) one or more aromatic-group-containing polyhydroxy ether resins, (ii) a compound having an alkoxysilyl group and an imidazole group in the molecule, and (iii) organic particles, wherein the content of the organic particles is 50% by weight or more based on the weight of the adhesive composition.

摘要翻译： 提供一种能够对电路板具有高粘附性的粘合剂组合物，并且还具有能够释放与连接并重新连接电路板的电路板的连接（修复特性）的能力。 一种粘合剂组合物，其包含：（i）一种或多种含芳族基团的多羟基醚树脂，（ii）分子中具有烷氧基甲硅烷基和咪唑基的化合物，和（iii）有机颗粒，其中有机 基于粘合剂组合物的重量，颗粒为50重量％以上。

公开(公告)号：US07041586B2

公开(公告)日：2006-05-09

申请号：US10105190

申请日：2002-03-26

申请人： Hiroshi Kudo ,  Masanobu Ikeda ,  Kenichi Watanabe ,  Yoshiyuki Ohkura

发明人： Hiroshi Kudo ,  Masanobu Ikeda ,  Kenichi Watanabe ,  Yoshiyuki Ohkura

IPC分类号： H01L21/44

CPC分类号： H01L23/5329 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76882 ,  H01L23/5222 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device includes a multilayer interconnection structure including an organic interlayer insulation film in which a conductor pattern is formed by a damascene process, wherein the organic interlayer insulation film carries thereon an organic spin-on-glass film.

公开(公告)号：US06417116B2

公开(公告)日：2002-07-09

申请号：US09274976

申请日：1999-03-23

申请人： Hiroshi Kudo ,  Masanobu Ikeda ,  Kenichi Watanabe ,  Yoshiyuki Ohkura

发明人： Hiroshi Kudo ,  Masanobu Ikeda ,  Kenichi Watanabe ,  Yoshiyuki Ohkura

IPC分类号： H01L2130

CPC分类号： H01L23/5329 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76882 ,  H01L23/5222 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor device includes a multilayer interconnection structure including an organic interlayer insulation film in which a conductor pattern is formed by a damascene process, wherein the organic interlayer insulation film carries thereon an organic spin-on-glass film.

公开(公告)号：US20110312191A1

公开(公告)日：2011-12-22

申请号：US13070740

申请日：2011-03-24

申请人： Yoshiyuki Ohkura ,  Toshiki Mori

发明人： Yoshiyuki Ohkura ,  Toshiki Mori

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/76808 ,  H01L21/76825 ,  H01L21/76826

摘要： A semiconductor device manufacturing method includes forming an insulation film containing silicon, oxygen and carbon over a semiconductor substrate by chemical vapor deposition; making UV cure on the insulation film being heated at a temperature of 350° C. or below after the forming the insulation film; and making helium plasma processing on the insulation film after the UV cure.

摘要翻译： 半导体器件制造方法包括通过化学气相沉积在半导体衬底上形成含有硅，氧和碳的绝缘膜; 在形成绝缘膜之后，在350℃以下的温度下对绝缘膜进行UV固化; 并在UV固化后对绝缘膜进行氦等离子体处理。