发明授权
US06417570B1 Layered dielectric film structure suitable for gate dielectric application in sub-0.25 &mgr;m technologies
有权
分层介质膜结构适用于0.25μm以下的栅极介质应用技术
- 专利标题： Layered dielectric film structure suitable for gate dielectric application in sub-0.25 &mgr;m technologies
- 专利标题（中）： 分层介质膜结构适用于0.25μm以下的栅极介质应用技术
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申请号： US09334977申请日： 1999-06-17
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公开(公告)号： US06417570B1公开(公告)日： 2002-07-09
- 发明人: Yi Ma , Pradip K. Roy
- 申请人： Yi Ma , Pradip K. Roy
- 主分类号： H01L2940
- IPC分类号： H01L2940
摘要：
A layered gate dielectric structure suppresses boron diffusion and provides a gate dielectric structure which is free of trap sites and pinholes, and which does not introduce mobility or drive current problems. The layered gate dielectric structure includes a film which is originally formed as a structurally deficient nitride film which is subsequently converted to either an oxynitride film or a stoichiometric nitride film.
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