发明授权
- 专利标题: Method of making a field emission device with buffer layer
- 专利标题(中): 制造具有缓冲层的场致发射器件的方法
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申请号: US09652746申请日: 2000-08-31
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公开(公告)号: US06425791B1公开(公告)日: 2002-07-30
- 发明人: Kanwal K. Raina , James J. Alwan
- 申请人: Kanwal K. Raina , James J. Alwan
- 主分类号: H01J902
- IPC分类号: H01J902
摘要:
A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.
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