发明授权
US06428850B1 Single-substrate-processing CVD method of forming film containing metal element
失效
用于形成含金属元素的单基板处理CVD方法
- 专利标题： Single-substrate-processing CVD method of forming film containing metal element
- 专利标题（中）： 用于形成含金属元素的单基板处理CVD方法
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申请号： US09613694申请日： 2000-07-10
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公开(公告)号： US06428850B1公开(公告)日： 2002-08-06
- 发明人: Hiroshi Shinriki , Yijun Liu , Masahito Sugiura
- 申请人： Hiroshi Shinriki , Yijun Liu , Masahito Sugiura
- 优先权： JP10-148343 19980513; JP10-274354 19980910
- 主分类号： C23C1606
- IPC分类号： C23C1606
摘要：
A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd)2 and Sr(thd)2, and a second process gas containing Ti(O-iPr)(thd)2 or Ti(thd)2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.