发明授权
- 专利标题： Split gate type flash memory
- 专利标题（中）： 分闸门型闪存
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申请号： US09801731申请日： 2001-03-09
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公开(公告)号： US06429472B2公开(公告)日： 2002-08-06
- 发明人: Byung-ki Kim , Won-il Ryu
- 申请人： Byung-ki Kim , Won-il Ryu
- 优先权： KR00-13346 20000316
- 主分类号： H01L2972
- IPC分类号： H01L2972
摘要：
A split gate type flash memory having an active region that improves an endurance characteristic along with program/erase efficiency, wherein the split gate type flash memory provides for improvement in the endurance characteristic and program/erase efficiency by making the width of an active region in a portion in which a source is overlapped by a floating gate as large as possible.
公开/授权文献
- US20010024394A1 Split gate type flash memory 公开/授权日：2001-09-27
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