Invention Grant
US06429503B2 Connection element in an integrated circuit having a layer structure disposed between two conductive structures
有权
具有设置在两个导电结构之间的层结构的集成电路中的连接元件
- Patent Title: Connection element in an integrated circuit having a layer structure disposed between two conductive structures
- Patent Title (中): 具有设置在两个导电结构之间的层结构的集成电路中的连接元件
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Application No.: US09888034Application Date: 2001-06-22
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Publication No.: US06429503B2Publication Date: 2002-08-06
- Inventor: Matthias Uwe Lehr , Rene Tews , Jochen Müller , Jürgen Lindolf
- Applicant: Matthias Uwe Lehr , Rene Tews , Jochen Müller , Jürgen Lindolf
- Priority: DE10030442 20000622
- Main IPC: H01L2900
- IPC: H01L2900
Abstract:
A connection element in an integrated circuit having a layer structure disposed between two conductive structures. The layer structure is formed by an insulating layer, which can be destroyed by application of a predetermined voltage, and a silicon layer. The insulating layer adjoins a first conductive structure made of tungsten.
Public/Granted literature
- US20020005586A1 Connection element Public/Granted day:2002-01-17
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