发明授权
- 专利标题: Surface acoustic wave device
- 专利标题(中): 表面声波装置
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申请号: US09640492申请日: 2000-08-16
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公开(公告)号: US06429570B1公开(公告)日: 2002-08-06
- 发明人: Kenji Inoue , Katsuo Sato , Hiroki Morikoshi , Katsumi Kawasaki , Kiyoshi Uchida
- 申请人: Kenji Inoue , Katsuo Sato , Hiroki Morikoshi , Katsumi Kawasaki , Kiyoshi Uchida
- 优先权: JP11-234744 19990820
- 主分类号: H01L4108
- IPC分类号: H01L4108
摘要:
A surface acoustic wave device includes a substrate and an inter-digital electrode on a surface of the substrate, wherein the substrate is formed by cutting out of a single crystal represented by a chemical formula, La&agr;Ta&bgr;Ga&ggr;O&dgr;(2.9≦&agr;≦3.1, 0.48≦&bgr;≦0.52, 5.4≦&ggr;≦5.6 and 8≦&dgr;≦14); a cut angle of the substrate cut out of the single crystal and a direction of propagation of surface acoustic waves on the substrate represented in terms of Euler's angles (&phgr;, &thgr;, &psgr;), &phgr;, &thgr; and &psgr; are found in one of a first area represented by −5 degrees≦&phgr;≦−5 degrees, 135 degrees≦&thgr;≦150 degrees and 20 degrees
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