公开(公告)号：US06246149B1

公开(公告)日：2001-06-12

申请号：US09395103

申请日：1999-09-14

申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

IPC分类号： H01L4104

CPC分类号： H03H9/02543 ,  C30B29/34 ,  C30B33/00

摘要： A surface acoustic wave device has a piezoelectric substrate whose properties include electromechanical coupling coefficient advantageous to widening passband width and SAW velocity advantageous to achieving a compact surface acoustic wave device. The piezoelectric substrate is composed of the single crystal represented by chemical formula Sr3TaGa3Si2O14 belonging to point group 32. For example, cut angle of the single crystal and propagation direction of the surface acoustic wave are in region 1-1, wherein said region 1-1 represented by Euler angles (&phgr;, &thgr;, &psgr;) satisfies &phgr;=25° ˜35°, &thgr;=20° ˜90°, &psgr;=−40° ˜40°. These angles may be in range 1-2, wherein said range 1-2 satisfies &phgr;=25° ˜35°, &thgr;=20° ˜90°, &psgr;=−25° ˜25°.

摘要翻译： 表面声波装置具有压电基板，其特性包括有利于扩大通带宽度和SAW速度的机电耦合系数，有利于实现紧凑的声表面波装置。 压电基板由属于点组32的化学式Sr 3 Ta Ga 3 Si 2 O 14表示的单晶构成。例如，单晶的切割角和声表面波的传播方向在区域1-1中，其中所述区域1-1 由欧拉角（phi，θ，psi）表示，满足phi = 25°〜35°，θ= 20°〜90°，psi = -40°〜40°。 这些角度可以在1-2范围内，其中所述范围1-2满足phi = 25°〜35°，θ= 20°〜90°，psi = -25°〜25°。

公开(公告)号：US06400061B1

公开(公告)日：2002-06-04

申请号：US09574310

申请日：2000-05-19

申请人： Kenji Inoue ,  Tsuguo Fukuda ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

发明人： Kenji Inoue ,  Tsuguo Fukuda ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

IPC分类号： H01L4108

CPC分类号： H03H9/02543

摘要： The present invention provides a piezoelectric substrate for a surface acoustic wave device which has high electromechanical coupling coefficient and low SAW velocity, and a surface acoustic wave device using the same. The present invention applies a single crystal comprising belonging to a point group 32 and having Ca3Ga2Ge4O14 type crystal structure. The basic component of the single crystal is comprised of La, Sr, Ta, Ga and O and is represented by the chemical formula: La3−xSrxTa0.5+0.5xGa5.5−0.5xO14. The composition ratio of Sr is preferably in the range of 0 x≦0.15, and more preferably in the range of 0.07 x≦0.08. The present invention also provides a surface acoustic wave device using that in which an interdigital finger electrode is formed in one main surface of the aforementioned piezoelectric substrate. When a cut angle of the substrate cut out of the single crystal and a propagation direction of surface acoustic waves are represented in terms of Euler angles (&phgr;, &thgr;, &psgr;), adequate characteristics can be obtained by selecting these angles.

摘要翻译： 本发明提供了一种具有高机电耦合系数和低SAW速度的表面声波装置的压电基片和使用该压电基片的表面声波装置。 本发明应用包含属于点组32并具有Ca 3 Ga 2 Ge 4 O 14型晶体结构的单晶。 单晶的基本成分由La，Sr，Ta，Ga和O组成，由化学式La3-xSrxTa0.5 + 0.5xGa5.5-0.5xO14表示。 Sr的组成比优选地在0℃的范围内。“CUSTOM-CHARACTER FILE =”20“ID =”CUSTOM-CHARACTER- 00001“/> x <= 0.15，更优选在0.07 x <= 0.08。 本发明还提供一种使用在上述压电基板的一个主表面上形成叉指指状电极的表面声波装置。 当从单晶切割的基板的切割角度和表面声波的传播方向以欧拉角（phi，θ，psi）表示时，通过选择这些角度可以获得足够的特性。

公开(公告)号：US06429570B1

公开(公告)日：2002-08-06

申请号：US09640492

申请日：2000-08-16

申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Kiyoshi Uchida

IPC分类号： H01L4108

CPC分类号： H03H9/02543

摘要： A surface acoustic wave device includes a substrate and an inter-digital electrode on a surface of the substrate, wherein the substrate is formed by cutting out of a single crystal represented by a chemical formula, La&agr;Ta&bgr;Ga&ggr;O&dgr;(2.9≦&agr;≦3.1, 0.48≦&bgr;≦0.52, 5.4≦&ggr;≦5.6 and 8≦&dgr;≦14); a cut angle of the substrate cut out of the single crystal and a direction of propagation of surface acoustic waves on the substrate represented in terms of Euler's angles (&phgr;, &thgr;, &psgr;), &phgr;, &thgr; and &psgr; are found in one of a first area represented by −5 degrees≦&phgr;≦−5 degrees, 135 degrees≦&thgr;≦150 degrees and 20 degrees

摘要翻译： 声表面波装置包括在基板的表面上的基板和数字间电极，其中，通过切割由化学式LaalphaTabetaGagammaOdelta（2.9≤α= 3.1,0.48）表示的单晶而形成基板 <=β<= 0.52,5.4 <=γ<= 5.6和8 <=δ<= 14）; 以欧拉角（phi，θ，psi），phi，θ和psi表示的基板上切出的单晶的切割角和表面声波的传播方向在第一 由-5度<= phi <= - 5度，135度<=θ<= 150度和20度

公开(公告)号：US06452306B1

公开(公告)日：2002-09-17

申请号：US09952927

申请日：2001-09-14

申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki

IPC分类号： H01L4104

CPC分类号： H03H9/02543

摘要： A compact and wide band surface acoustic wave device for intermediate-frequency is disclosed. A piezoelectric substrate for use in a surface acoustic wave device having high electromechanical coupling factor and low SAW velocity is also disclosed. The surface acoustic wave device is constituted of a piezoelectric substrate 1 and inter-digital electrodes 2, 2 formed on the piezoelectric substrate 1. The piezoelectric substrate 1 has a crystal structure of Ca3Ga2Ge4O14 and is represented by the chemical formula, Sr3NbGa3Si2O14. A cut angle of the piezoelectric substrate 1 cut out of the single crystal and a direction of propagation of surface acoustic waves on the piezoelectric substrate represented in terms of Euler's angles (&phgr;, &thgr;, &psgr;) are found in one of a first area represented by −5°≦&phgr;≦15°, 0°≦&thgr;≦180°, and −50°≦&psgr;≦50° and a second area represented by 15°≦&phgr;≦30°, 0°≦&thgr;≦180°, and −40°≦&psgr;≦40°.

摘要翻译： 公开了一种用于中频的紧凑且宽带的声表面波装置。 还公开了一种用于具有高机电耦合系数和低SAW速度的表面声波装置中的压电基片。声表面波装置由压电基片1和形成在压电基片1上的数字间电极2,2构成 压电基板1具有Ca 3 Ga 2 Ge 4 O 14的晶体结构，由化学式Sr 3 Nb Ga 3 Si 2 O 14表示。 由欧姆角（phi，θ，psi）表示的压电基片1从单晶切割的角度和表面声波的传播方向在欧拉角（phi，θ，psi）表示的第一区域中， -5°<= phi <= 15°，0°<=θ<= 180°，-50°<= psi <= 50°，第二区由15°<= phi <= 30°，0° <=θ<= 180°，-40°<= psi <= 40°。

公开(公告)号：US06700300B2

公开(公告)日：2004-03-02

申请号：US09968820

申请日：2001-10-02

申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Jun Sato

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Katsumi Kawasaki ,  Jun Sato

IPC分类号： H01L4108

CPC分类号： H03H9/02543

摘要： A compact and wide band surface acoustic wave device for intermediate-frequency is disclosed. A piezoelectric substrate for use in a surface acoustic wave device having high electromechanical coupling factor and low SAW velocity is also disclosed. The surface acoustic wave device is constituted of a piezoelectric substrate 1 and inter-digital electrodes 2, 2 formed on the piezoelectric substrate 1. The piezoelectric substrate 1 has a crystal structure of Ca3Ga2Ge4O14 and is represented by the chemical formula, Ca3TaGa3Si2O14. A cut angle of the piezoelectric substrate 1 cut out of the single crystal and a direction of propagation of surface acoustic waves on the piezoelectric substrate represented in terms of Euler's angles (&phgr;, &thgr;, &psgr;) are found in an area represented by −2.5°≦&phgr;≦2.5°, 30°≦&thgr;≦90°, and −65°≦&psgr;≦65°.

摘要翻译： 公开了一种用于中频的紧凑且宽带的声表面波装置。 还公开了一种用于具有高机电耦合系数和低SAW速度的表面声波装置中的压电基片。声表面波装置由压电基片1和形成在压电基片1上的数字间电极2,2构成 压电基板1具有Ca 3 Ga 2 Ge 4 O 14的晶体结构，由化学式Ca 3 Ta Ga 3 Si 2 O 14表示。 从欧姆角（phi，θ，psi）表示的压电基板上切出的压电基板1的切割角和压电基板上的表面声波的传播方向在-2.5° <= phi <= 2.5°，30°<=θ<= 90°，-65°<= psi <= 65°。

公开(公告)号：US06696736B2

公开(公告)日：2004-02-24

申请号：US10332958

申请日：2003-01-14

申请人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Jun Sato

发明人： Kenji Inoue ,  Katsuo Sato ,  Hiroki Morikoshi ,  Jun Sato

IPC分类号： H01L2982

CPC分类号： H03H9/02543

摘要： The surface acoustic wave device comprises a piezoelectric substrate (1) and a pair of interdigitated electrodes (2) provided on one main surface of the piezoelectric substrate (1). As the material of the piezoelectric substrate (1), a single crystal belonging to the point group 32, having a crystal structure of Ca3Ga2Ge4O14 type, containing Ca, Nb, Ga, Si and O as main components, and being represented by the chemical formula Ca3NbGa3Si2O14 is used. The cut angle of the substrate (1) and the propagation direction can be selected as appropriate to thereby realize the substrate (1) which has a large electromechanical coupling coefficient that is effective to achieve a wider passband and a low SAW velocity that is effective to reduce the size of a surface acoustic wave device.

摘要翻译： 表面声波装置包括压电基片（1）和设置在压电基片（1）的一个主表面上的一对叉指电极（2）。 作为压电基板（1）的材料，属于具有Ca 3 Ga 2 Ge 4 O 14型晶体结构的点组32的单晶，含有Ca，Nb，Ga，Si和O作为主要成分，并且由化学式 使用Ca3NbGa3Si2O14。 可以适当选择基板（1）的切割角度和传播方向，从而实现具有大的机电耦合系数的基板（1），其有效地实现更宽的通带和低的SAW速度， 减小声表面波器件的尺寸。

公开(公告)号：US20060099454A1

公开(公告)日：2006-05-11

申请号：US11269496

申请日：2005-11-07

申请人： Hiroki Morikoshi ,  Katsuhiko Wakayama

发明人： Hiroki Morikoshi ,  Katsuhiko Wakayama

IPC分类号： H01F1/03 ,  B32B15/00

CPC分类号： H01F41/0246 ,  B22F1/0055 ,  B22F5/006 ,  B22F2003/248 ,  B22F2998/10 ,  H01F1/18 ,  H01F1/24 ,  H05K9/0083 ,  Y10T428/32 ,  B22F9/04 ,  B22F1/0059 ,  B22F3/18 ,  B22F3/24

摘要： An object of the present invention is to provide a method for producing an electromagnetic wave absorbing sheet with properties thereof further improved. A treated powder P0 pulverized and flaked in a pulverizing step is placed in a centrifugal gas-flow classifier 50. The treated powder is classified into a flaky soft magnetic metal powder P1 and a non-flaky powder P2 on the basis of the difference between the centrifugal force and the drag acting on each of these powders in a gas flow circling in a chamber 51. The non-flaky powder P2 is eliminated and the flaky soft magnetic metal powder P1 is used to form an electromagnetic wave absorbing sheet, the performances of the electromagnetic wave absorbing sheet being thereby improved. The classified non-flaky powder P2 is preferably recycled as the raw material powder used in the pulverizing step.

摘要翻译： 本发明的目的在于提供一种电磁波吸收片的制造方法，其特性进一步提高。 在粉碎步骤中粉碎和粉碎的处理粉末P 0被放置在离心气流分级器50中。处理过的粉末基于粉末状分级器50分为片状软磁性金属粉末P 1和非片状粉末P 2 在室51中循环的气流中，离心力和作用在这些粉末上的阻力之间的差异被消除，并且使用片状软磁性金属粉末P 1形成电磁波吸收 从而提高了电磁波吸收片的性能。 分级的非片状粉末P 2优选作为粉碎步骤中使用的原料粉末进行再循环。