发明授权
- 专利标题： Semiconductor device with copper wiring and its manufacture method
- 专利标题（中）： 带铜线的半导体器件及其制造方法
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申请号： US09111799申请日： 1998-07-08
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公开(公告)号： US06440844B1公开(公告)日： 2002-08-27
- 发明人: Hideo Takagi , Kiyoshi Izumi , Wataru Futo , Satoshi Otsuka , Shigetaka Uji , Masataka Hoshino , Yukihiro Satoh , Koji Endo , Yuzuru Ohta , Nobuhiro Misawa
- 申请人： Hideo Takagi , Kiyoshi Izumi , Wataru Futo , Satoshi Otsuka , Shigetaka Uji , Masataka Hoshino , Yukihiro Satoh , Koji Endo , Yuzuru Ohta , Nobuhiro Misawa
- 优先权： JP9-182559 19970708; JP10-191804 19980707
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
The method of manufacturing a semiconductor device includes the steps of forming copper wiring; reducing an oxide film on the surface of the copper wiring by heating the copper wiring to a temperature in a range of 250° C.-450° C. under reductive gas or by treating the copper wiring in plasma of reductive gas; and then forming a film of a material not containing oxygen on the copper wiring without exposing the copper wiring to external atmosphere, and can provide a semiconductor device with good copper wiring.