发明授权
US06441445B1 Integrated device with bipolar transistor and electronic switch in “emitter switching” configuration
有权
具有双极晶体管和电子开关的“发射极开关”配置的集成器件
- 专利标题： Integrated device with bipolar transistor and electronic switch in “emitter switching” configuration
- 专利标题（中）： 具有双极晶体管和电子开关的“发射极开关”配置的集成器件
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申请号： US09413740申请日： 1999-10-06
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公开(公告)号： US06441445B1公开(公告)日： 2002-08-27
- 发明人: Salvatore Leonardi , Davide Patti , Delfo Sanfilippo
- 申请人： Salvatore Leonardi , Davide Patti , Delfo Sanfilippo
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
The integrated circuit device has a vertical conduction structure in which a region, which contains the base of a bipolar transistor, has zones having different concentrations. The concentrations are lower where the flow of charges is more intense and higher elsewhere. A high gain of the bipolar transistor and a low resistance of the electronic switch in conduction are thus obtained.
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