发明授权
US06451660B1 Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated water
有权
一种形成双极晶体管的方法，该方法包括通过在臭氧水中漂洗该衬底而在衬底上形成的自然氧化物层
- 专利标题： Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated water
- 专利标题（中）： 一种形成双极晶体管的方法，该方法包括通过在臭氧水中漂洗该衬底而在衬底上形成的自然氧化物层
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申请号： US09591037申请日： 2000-06-09
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公开(公告)号： US06451660B1公开(公告)日： 2002-09-17
- 发明人: Yi Ma , Yih-Feng Chyan , Chung Wai Leung , Jane Qian Liu , Timothy Scott Campbell
- 申请人： Yi Ma , Yih-Feng Chyan , Chung Wai Leung , Jane Qian Liu , Timothy Scott Campbell
- 主分类号： H01L2131
- IPC分类号： H01L2131
摘要：
A bipolar device (10) includes an oxide layer (24) which is grown on the surface (16) of a semiconductor substrate (12) by immersing the surface in ozonated deionized water. By selecting an appropriate temperature of the water and concentration of the ozone, the thickness of the film can be maintained within fine tolerances from lot to lot, and over the surface of a wafer (W) comprising the substrate.
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