公开(公告)号：US06451660B1

公开(公告)日：2002-09-17

申请号：US09591037

申请日：2000-06-09

申请人： Yi Ma ,  Yih-Feng Chyan ,  Chung Wai Leung ,  Jane Qian Liu ,  Timothy Scott Campbell

发明人： Yi Ma ,  Yih-Feng Chyan ,  Chung Wai Leung ,  Jane Qian Liu ,  Timothy Scott Campbell

IPC分类号： H01L2131

CPC分类号： H01L29/66272 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/31675 ,  H01L29/0804

摘要： A bipolar device (10) includes an oxide layer (24) which is grown on the surface (16) of a semiconductor substrate (12) by immersing the surface in ozonated deionized water. By selecting an appropriate temperature of the water and concentration of the ozone, the thickness of the film can be maintained within fine tolerances from lot to lot, and over the surface of a wafer (W) comprising the substrate.

摘要翻译： 双极器件（10）包括通过将表面浸入臭氧化去离子水中而在半导体衬底（12）的表面（16）上生长的氧化物层（24）。 通过选择水的适当温度和臭氧的浓度，可以将薄膜的厚度保持在大量的精细公差之内，并且在包含基底的晶片（W）的表面上。

公开(公告)号：US07898724B2

公开(公告)日：2011-03-01

申请号：US12264996

申请日：2008-11-05

申请人： Jane Qian Liu ,  Frank Armstrong ,  Edward Carl Fisher ,  Scott Patrick Overmann ,  Leatrice Lea Gallman Adams

发明人： Jane Qian Liu ,  Frank Armstrong ,  Edward Carl Fisher ,  Scott Patrick Overmann ,  Leatrice Lea Gallman Adams

IPC分类号： G02B26/00 ,  H01L23/48

CPC分类号： G02B7/008 ,  B81B3/0081 ,  B81B7/0077 ,  B81B2201/047 ,  G02B26/0833 ,  H01L21/56 ,  H01L23/13 ,  H01L23/24 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/00

摘要： A packaged electronic device includes a substrate with an upper surface interrupted by a well formed in the substrate. The well has a substrate bottom surface and a substrate sidewall. An electronic device is located in the well over the substrate bottom surface and has a device top surface and a device sidewall. A trench is bounded by the substrate bottom surface, the substrate sidewall and the device sidewall. An encapsulant at least partially fills the trench and contacts the substrate sidewall and the device sidewall. The encapsulant has a first elevation on the substrate sidewall with respect to the substrate bottom surface and a second elevation on the substrate device sidewall with respect to the substrate bottom surface that is at least about 35% greater than the first elevation.

摘要翻译： 封装的电子器件包括具有被衬底中形成的阱中断的上表面的衬底。 阱具有衬底底表面和衬底侧壁。 电子器件位于衬底底部表面的阱中，并且具有器件顶表面和器件侧壁。 沟槽由衬底底表面，衬底侧壁和器件侧壁限定。 密封剂至少部分地填充沟槽并且接触衬底侧壁和器件侧壁。 该密封剂在衬底侧壁上相对于衬底底表面具有第一高度，相对于衬底底表面的衬底装置侧壁上的第二高度比第一高度至少大约35％。

公开(公告)号：US5950096A

公开(公告)日：1999-09-07

申请号：US935362

申请日：1997-09-22

申请人： Robert Y.S. Huang ,  David Kou-Fong Hwang ,  Stephen Carl Kuehne ,  Jean Ling Lee ,  Jane Qian Liu ,  Yi Ma ,  Minseok Oh

发明人： Robert Y.S. Huang ,  David Kou-Fong Hwang ,  Stephen Carl Kuehne ,  Jean Ling Lee ,  Jane Qian Liu ,  Yi Ma ,  Minseok Oh

IPC分类号： H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76202

摘要： In the fabrication of an integrated circuit, undesirable bird's beak pull back due to damage caused during ion implantation is alleviated by means of rapid thermal annealing step prior to chemical etching.

摘要翻译： 在集成电路的制造中，由化学蚀刻之前​​的快速热退火步骤减轻了离子注入过程中造成的损坏引起的不希望有的鸟喙拉回。

公开(公告)号：US20100110527A1

公开(公告)日：2010-05-06

申请号：US12264996

申请日：2008-11-05

申请人： Jane Qian Liu ,  Frank Armstrong ,  Edward Carl Fisher ,  Scott Patrick Overmann ,  Leatrice Lea Gallman Adams

发明人： Jane Qian Liu ,  Frank Armstrong ,  Edward Carl Fisher ,  Scott Patrick Overmann ,  Leatrice Lea Gallman Adams

IPC分类号： G02B26/00 ,  H01L21/56 ,  H01L23/31

CPC分类号： G02B7/008 ,  B81B3/0081 ,  B81B7/0077 ,  B81B2201/047 ,  G02B26/0833 ,  H01L21/56 ,  H01L23/13 ,  H01L23/24 ,  H01L23/3121 ,  H01L2924/0002 ,  H01L2924/00

摘要： A packaged electronic device includes a substrate with an upper surface interrupted by a well formed in the substrate. The well has a substrate bottom surface and a substrate sidewall. An electronic device is located in the well over the substrate bottom surface and has a device top surface and a device sidewall. A trench is bounded by the substrate bottom surface, the substrate sidewall and the device sidewall. An encapsulant at least partially fills the trench and contacts the substrate sidewall and the device sidewall. The encapsulant has a first elevation on the substrate sidewall with respect to the substrate bottom surface and a second elevation on the substrate device sidewall with respect to the substrate bottom surface that is at least about 35% greater than the first elevation.

摘要翻译： 封装的电子器件包括具有被衬底中形成的阱中断的上表面的衬底。 阱具有衬底底表面和衬底侧壁。 电子器件位于衬底底部表面的阱中，并且具有器件顶表面和器件侧壁。 沟槽由衬底底表面，衬底侧壁和器件侧壁限定。 密封剂至少部分地填充沟槽并且接触衬底侧壁和器件侧壁。 该密封剂在衬底侧壁上相对于衬底底表面具有第一高度，相对于衬底底表面的衬底装置侧壁上的第二高度比第一高度至少大约35％。