公开(公告)号：US07157375B2

公开(公告)日：2007-01-02

申请号：US10925555

申请日：2004-08-25

申请人： Timothy Scott Campbell ,  Kelly Hinckley ,  Paul B. Murphey ,  Daniel M. Oman ,  Paul Edward Wheeler

发明人： Timothy Scott Campbell ,  Kelly Hinckley ,  Paul B. Murphey ,  Daniel M. Oman ,  Paul Edward Wheeler

IPC分类号： H01L21/302

CPC分类号： G03F7/427 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/31138

摘要： A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The method also comprises determining an endpoint to the removal by a determined change in the visible light emanating from a chamber containing the wafer.A multi-step process of the present invention comprises the above method and a preliminary RIE-free microwave-energy-generated plasma that solubilizes polymer on walls of vias of the wafer. This multi-step process also comprises, following the exposing step, a cooling step, a cooling step with a temperature check, and a deglazing step. The deglazing step also uses an RIE-free microwave-energy-generated plasma. Specific gas mixtures for the respective plasmas are exemplified. Other embodiments of methods of the present invention are comprised of less steps, or a consolidation of such steps.

摘要翻译： 从半导体晶片去除光致抗蚀剂层的工艺包括将晶片在相对较高的温度下暴露于初级气体混合物的无RIE微波能量产生的等离子体，该曝光引起光致抗蚀剂去除，例如通过灰化。 该方法还包括通过从包含晶片的腔室发出的可见光的确定的变化来确定去除的终点。 本发明的多步法包括上述方法和将聚合物溶解在晶片通孔壁上的初步无RIE微波能量产生的等离子体。 该多步骤过程还包括在暴露步骤之后的冷却步骤，具有温度检查的冷却步骤和降温步骤。 降温步骤还使用无RIE微波能量产生的等离子体。 例示了各等离子体的特定气体混合物。 本发明的方法的其他实施方案由较少的步骤组成，或者这些步骤的合并。

公开(公告)号：US06451660B1

公开(公告)日：2002-09-17

申请号：US09591037

申请日：2000-06-09

申请人： Yi Ma ,  Yih-Feng Chyan ,  Chung Wai Leung ,  Jane Qian Liu ,  Timothy Scott Campbell

发明人： Yi Ma ,  Yih-Feng Chyan ,  Chung Wai Leung ,  Jane Qian Liu ,  Timothy Scott Campbell

IPC分类号： H01L2131

CPC分类号： H01L29/66272 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/31675 ,  H01L29/0804

摘要： A bipolar device (10) includes an oxide layer (24) which is grown on the surface (16) of a semiconductor substrate (12) by immersing the surface in ozonated deionized water. By selecting an appropriate temperature of the water and concentration of the ozone, the thickness of the film can be maintained within fine tolerances from lot to lot, and over the surface of a wafer (W) comprising the substrate.

摘要翻译： 双极器件（10）包括通过将表面浸入臭氧化去离子水中而在半导体衬底（12）的表面（16）上生长的氧化物层（24）。 通过选择水的适当温度和臭氧的浓度，可以将薄膜的厚度保持在大量的精细公差之内，并且在包含基底的晶片（W）的表面上。