发明授权
US06452213B1 SEMICONDUCTOR DEVICE HAVING FIRST, SECOND AND THIRD NON-CRYSTALLINE FILMS SEQUENTIALLY FORMED ON INSULATING BASE WITH SECOND FILM HAVING THERMAL CONDUCTIVITY NOT LOWER THAN THAT OF FIRST FILM AND NOT HIGHER THAN THAT OF THIRD FILM, AND METHOD OF MANUFACTURING THE SAME
失效
具有第一，第二和第三非晶体薄膜的半导体器件在具有不低于第一薄膜且不高于第三薄膜的热导率的第二薄膜的绝缘基底上形成，及其制造方法
- 专利标题： SEMICONDUCTOR DEVICE HAVING FIRST, SECOND AND THIRD NON-CRYSTALLINE FILMS SEQUENTIALLY FORMED ON INSULATING BASE WITH SECOND FILM HAVING THERMAL CONDUCTIVITY NOT LOWER THAN THAT OF FIRST FILM AND NOT HIGHER THAN THAT OF THIRD FILM, AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 具有第一，第二和第三非晶体薄膜的半导体器件在具有不低于第一薄膜且不高于第三薄膜的热导率的第二薄膜的绝缘基底上形成，及其制造方法
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申请号： US09696002申请日： 2000-10-26
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公开(公告)号： US06452213B1公开(公告)日： 2002-09-17
- 发明人: Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
- 申请人： Yoshinobu Kimura , Makoto Ohkura , Takeo Shiba , Takahiro Kamo , Yoshiyuki Kaneko
- 优先权： JP11-307502 19991028
- 主分类号： H01L29786
- IPC分类号： H01L29786
摘要：
A first thin film is formed on one surface of an insulating base, and a second thin film having a thermal conductivity higher than the first thin film is formed on the first thin film. An amorphous semiconductor thin film having a higher thermal conductivity than the second thin film is formed on at least the second thin film. The amorphous semiconductor thin film is changed to a polycrystalline semiconductor thin film through laser annealing. The provision of the second thin film results in larger and uniform crystal grain diameters and less proturberances in the polycrystalline semiconductor thin film.
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