A new method is provided to treat contact holes after hole formation has been completed. A layer of non-conformal dielectric is deposited over the surface in which the contact hole has been formed thereby including the sidewalls and bottom of the contact hole. The non-conformal dielectric will be unevenly deposited on The sidewalls and bottom of the contact hole. This results in a relatively light deposition of non-conformal dielectric along the lower portions of the sidewalls and on the bottom of the contact hole with a heavier coating of non-conformal dielectric being deposited along the upper reaches of the contact hole. The objective of the invention is to prevent the enlargement of the hole diameter during subsequent processing steps. The non-conformal dielectric can be removed from the bottom using a wet etch.