公开(公告)号：US06458706B1

公开(公告)日：2002-10-01

申请号：US09507903

申请日：2000-02-22

申请人： Eddy Chiang ,  Erik S. Jeng ,  I-Ping Lee ,  Kuei-Chuen Ho

发明人： Eddy Chiang ,  Erik S. Jeng ,  I-Ping Lee ,  Kuei-Chuen Ho

IPC分类号： H01L21302

CPC分类号： H01L21/76831 ,  H01L21/76802 ,  H01L27/10855 ,  H01L27/10888

摘要： A new method is provided to treat contact holes after hole formation has been completed. A layer of non-conformal dielectric is deposited over the surface in which the contact hole has been formed thereby including the sidewalls and bottom of the contact hole. The non-conformal dielectric will be unevenly deposited on The sidewalls and bottom of the contact hole. This results in a relatively light deposition of non-conformal dielectric along the lower portions of the sidewalls and on the bottom of the contact hole with a heavier coating of non-conformal dielectric being deposited along the upper reaches of the contact hole. The objective of the invention is to prevent the enlargement of the hole diameter during subsequent processing steps. The non-conformal dielectric can be removed from the bottom using a wet etch.

摘要翻译： 提供了一种新方法，用于在孔形成完成后处理接触孔。 在其上形成接触孔的表面上沉积一层非保形电介质，由此包括接触孔的侧壁和底部。 非共形电介质将不均匀地沉积在接触孔的侧壁和底部上。 这导致沿着侧壁的下部和接触孔的底部上的非保形电介质的相对轻的沉积，具有沿接触孔的上游层沉积的较重的非保形电介质涂层。 本发明的目的是在随后的处理步骤中防止孔直径的扩大。 可以使用湿蚀刻从底部去除非保形电介质。