发明授权
US06459629B1 Memory with a bit line block and/or a word line block for preventing reverse engineering
有权
具有位线块和/或字线块的存储器用于防止逆向工程
- 专利标题： Memory with a bit line block and/or a word line block for preventing reverse engineering
- 专利标题（中）： 具有位线块和/或字线块的存储器用于防止逆向工程
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申请号： US09848564申请日： 2001-05-03
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公开(公告)号： US06459629B1公开(公告)日： 2002-10-01
- 发明人: William M. Clark, Jr. , James P. Baukus , Lap-Wai Chow
- 申请人： William M. Clark, Jr. , James P. Baukus , Lap-Wai Chow
- 主分类号： G11C700
- IPC分类号： G11C700
摘要：
A method and circuit for blocking unauthorized access to at least one memory cell in a semiconductor memory. The method includes providing a switch and/or a link which assumes an open state when access to the at least one memory cell is to be blocked; and coupling a data line associated with the at least one memory cell to a constant voltage source in response to the switch or link assuming an open state.
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