发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US09429635申请日: 1999-10-29
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公开(公告)号: US06462425B1公开(公告)日: 2002-10-08
- 发明人: Toshihiro Iwasaki , Masatoshi Yasunaga , Satoshi Yamada , Kozo Harada , Michitaka Kimura
- 申请人: Toshihiro Iwasaki , Masatoshi Yasunaga , Satoshi Yamada , Kozo Harada , Michitaka Kimura
- 优先权: JP11-110461 19990419
- 主分类号: H01L2940
- IPC分类号: H01L2940
摘要:
A semiconductor device allowing a mounting of a semiconductor substrate with narrow electrode pad interval on an insulated circuit board while securing a favorable insulation characteristic and a manufacturing method thereof are obtained. The semiconductor device includes an electrode pad formed on a semiconductor substrate; a connecting underlying metal film connected to the electrode pad; a connecting conductor establishing electrical conduction between the connecting underlying metal film and a terminal electrode on an insulated circuit board; and non-conductive resin surrounding the connecting conductor and filling a gap between the substrate and the insulated circuit board. Here, the connecting underlying metal film is not covered by the connecting conductor at least in a peripheral region including an outer peripheral portion thereof
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