发明授权
US06468136B1 Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching 失效
钨CMP具有改进的对准标记完整性,边缘残留减少,并且减少保持环凹口

  • 专利标题: Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching
  • 专利标题(中): 钨CMP具有改进的对准标记完整性,边缘残留减少,并且减少保持环凹口
  • 申请号: US09606666
    申请日: 2000-06-30
  • 公开(公告)号: US06468136B1
    公开(公告)日: 2002-10-22
  • 发明人: Robert T. LumDavid W. GroechelLi WuChiu Chan
  • 申请人: Robert T. LumDavid W. GroechelLi WuChiu Chan
  • 主分类号: B24B100
  • IPC分类号: B24B100
Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching
摘要:
Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.
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