发明授权
US06468136B1 Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching
失效
钨CMP具有改进的对准标记完整性,边缘残留减少,并且减少保持环凹口
- 专利标题: Tungsten CMP with improved alignment mark integrity, reduced edge residue, and reduced retainer ring notching
- 专利标题(中): 钨CMP具有改进的对准标记完整性,边缘残留减少,并且减少保持环凹口
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申请号: US09606666申请日: 2000-06-30
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公开(公告)号: US06468136B1公开(公告)日: 2002-10-22
- 发明人: Robert T. Lum , David W. Groechel , Li Wu , Chiu Chan
- 申请人: Robert T. Lum , David W. Groechel , Li Wu , Chiu Chan
- 主分类号: B24B100
- IPC分类号: B24B100
摘要:
Tungsten CMP is conducted with improved alignment mark integrity and reduced edge residue by employing a retaining ring having a mechanical hardness greater than about 85 durometer and a relatively soft polishing pad. Embodiments of the present invention include conducting CMP employing a carrier comprising a retaining ring additionally having a wear rate during CMP of less than about 1 mil per hour and a polishing pad having a hardness less than about 60 durometer. Suitable retaining ring materials include ceramics, quartz, polymers and fiber reinforced polymers.
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