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    High selectivity oxide etch process for integrated circuit structures
    4.
    发明授权
    High selectivity oxide etch process for integrated circuit structures 失效
    集成电路结构的高选择性氧化物蚀刻工艺

    公开(公告)号：US06171974B2

    公开(公告)日：2001-01-09

    申请号：US07826310

    申请日：1992-01-24

    申请人： Jeffrey Marks ,  Jerry Yuen-Kui Wong ,  David W. Groechel ,  Peter R. Keswick ,  Chan-Lon Yang

    发明人： Jeffrey Marks ,  Jerry Yuen-Kui Wong ,  David W. Groechel ,  Peter R. Keswick ,  Chan-Lon Yang

    IPC分类号： H01L21302

    CPC分类号： H01L21/67069 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01L21/6831

    摘要： A plasma etch process for oxide having high selectivity to silicon is disclosed comprising the use of a mixture of SiF4 and one or more other fluorine-containing etch gases in an etch chamber maintained within a pressure range of from about 1 milliTorr to about 200 milliTorr. Preferably, the etch chamber also contains an exposed silicon surface. The plasma may be generated by a capacitive discharge type plasma generator, if pressures of at least about 50 milliTorr are used, but preferably the plasma is generated by an electromagnetically coupled plasma generator. The high selectivity exhibited by the etch process of the invention permits use of an electromagnetically coupled plasma generator which, in turn, permits operation of the etch process at reduced pressures of preferably from about 1 milliTorr to about 30 milliTorr resulting in the etching of vertical sidewall openings in the oxide layer.

    摘要翻译： 公开了一种对硅具有高选择性的氧化物的等离子体蚀刻工艺，包括在保持在约1毫乇至约200毫乇的压力范围内的蚀刻室中使用SiF 4和一种或多种其它含氟蚀刻气体的混合物。 优选地，蚀刻室还包含暴露的硅表面。 如果使用至少约50毫乇的压力，则等离子体可以由电容放电型等离子体发生器产生，但优选地，等离子体由电磁耦合等离子体发生器产生。 通过本发明的蚀刻工艺表现出的高选择性允许使用电磁耦合等离子体发生器，其进而允许在优选约1毫乇至约30毫乇的减压下进行蚀刻工艺，导致垂直侧壁的蚀刻 氧化层中的开口。

    Substrate polishing with reduced contamination
    9.
    发明授权
    Substrate polishing with reduced contamination 有权
    底物抛光，污染减少

    公开(公告)号：US6053801A

    公开(公告)日：2000-04-25

    申请号：US309182

    申请日：1999-05-10

    申请人： Jay D. Pinson ,  Nitin Shah ,  David W. Groechel ,  Joe Waidl

    发明人： Jay D. Pinson ,  Nitin Shah ,  David W. Groechel ,  Joe Waidl

    IPC分类号： B08B17/02 ,  B24B53/007 ,  B24B53/017 ,  B24B57/02 ,  B24B55/12

    CPC分类号： B24B53/017 ,  B08B17/02 ,  B24B57/02

    摘要： Systems and methods for polishing a substrate with reduced contamination are described. A rinse arm has one or more nozzles configured to direct rinse fluid toward a polishing surface for polishing a substrate. The rinse arm further includes a fluid dispenser configured to direct rinse fluid to one or more surfaces of the rinse arm in proximity to the polishing surface and exposed to airborne slurry particles generated from slurry on the polishing surface. By maintaining the atmosphere in the vicinity of the exposed rinse arm surfaces at an elevated relative humidity level, airborne slurry particles adhering to the exposed rinse arm surfaces remain in suspension and, therefore, may be easily cleaned, e.g., during a high pressure rinse cycle. This feature reduces the likelihood that slurry particles will accumulate on exposed surfaces of the polishing apparatus and flake off while a substrate is being polished, reducing the likelihood of substrate defects caused by such slurry contamination.

    摘要翻译： 描述了用于抛光具有降低的污染物的基底的系统和方法。 冲洗臂具有一个或多个喷嘴，其构造成将冲洗流体引向研磨表面以抛光基底。 冲洗臂还包括流体分配器，其配置成将冲洗流体引导到靠近抛光表面的冲洗臂的一个或多个表面，并暴露于由抛光表面上的浆料产生的空气传播的浆料颗粒。 通过在升高的相对湿度水平下保持暴露的冲洗臂表面附近的气氛，附着在暴露的冲洗臂表面上的气载浆料颗粒保持悬浮状态，因此可以容易地清洁，例如在高压漂洗循环 。 该特征降低了浆料颗粒在抛光装置的暴露表面上积聚的可能性，并且在抛光衬底时剥落，从而降低了由这种浆料污染引起的衬底缺陷的可能性。