- 专利标题: Substrate processing apparatus and substrate processing method
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申请号: US10122333申请日: 2002-04-16
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公开(公告)号: US06471422B2公开(公告)日: 2002-10-29
- 发明人: Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
- 申请人: Issei Ueda , Shinichi Hayashi , Naruaki Iida , Yuji Matsuyama , Yoichi Deguchi
- 优先权: JP11-296395 19991019
- 主分类号: G03D500
- IPC分类号: G03D500
摘要:
Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.
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