公开(公告)号：US20100107390A1

公开(公告)日：2010-05-06

申请号：US12685181

申请日：2010-01-11

申请人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

发明人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

IPC分类号： H01L41/24

CPC分类号： H01L41/1876 ,  C04B35/493 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/6025 ,  C04B2235/656 ,  H01L41/083 ,  H01L41/273 ,  Y10T29/42

摘要： A multilayer piezoelectric device including a body having internal electrode layers and piezoelectric ceramic layers alternately stacked. The internal electrode layers contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O3 as a major component, and a metal oxide (Nb2O5, Sb2O5, Ta2O5, or WO3) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers such that the concentration of the metal oxide decreases with distance from the internal electrode layers. Thereby, even in a case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant.

摘要翻译： 一种多层压电器件，包括具有交替堆叠的内部电极层和压电陶瓷层的主体。 内部电极层含有Cu作为主要成分，压电陶瓷层含有以Pb（Ti，Zr）O 3为主成分的复合氧化物，含有Nb的金属氧化物（Nb 2 O 5，Sb 2 O 5，Ta 2 O 5，WO 3） 作为五价金属元素和六价金属元素中的至少一种的Sb，Ta或W被并入压电陶瓷层中，使得金属氧化物的浓度随着与内部电极层的距离而减小。 因此，即使在内部电极含有Cu作为主要成分的情况下，也可以提供能够通过低温烧制获得的多层压电器件，同时确保足够的压电常数。

公开(公告)号：US20080079410A1

公开(公告)日：2008-04-03

申请号：US11902089

申请日：2007-09-19

申请人： Takuya Ishii ,  Mikio Motomori ,  Kazuhito Kimura ,  Yoichi Deguchi ,  Satoshi Wada ,  Yoshihisa Minami

发明人： Takuya Ishii ,  Mikio Motomori ,  Kazuhito Kimura ,  Yoichi Deguchi ,  Satoshi Wada ,  Yoshihisa Minami

IPC分类号： G05F1/575 ,  G05F1/618

CPC分类号： G05F1/575

摘要： A power supply device includes an inductor controlled by switching to be charged or discharged such that a DC input voltage is boosted and a capacitor which smoothes the boosted voltage to generate a DC output voltage. Specifically, the power supply device further includes a transistor connected between the inductor and the capacitor to carry out a rectification function; an output voltage determination circuit which refers to the DC input voltage and the DC output voltage to determine the level of these voltages; and a current control circuit which controls a current flowing through the transistor such that the current has a predetermined value when the output voltage determination circuit determines that the DC output voltage is lower than the DC input voltage.

摘要翻译： 电源装置包括通过切换进行充电或放电控制的电感器，使得DC输入电压升压，以及电容器，其使升压电压平滑以产生DC输出电压。 具体地，电源装置还包括连接在电感器和电容器之间的晶体管，以实现整流功能; 输出电压确定电路，其参考DC输入电压和DC输出电压以确定这些电压的电平; 以及电流控制电路，其控制流过所述晶体管的电流，使得当所述输出电压确定电路确定所述DC输出电压低于所述DC输入电压时，所述电流具有预定值。

公开(公告)号：US20080074004A1

公开(公告)日：2008-03-27

申请号：US11948734

申请日：2007-11-30

申请人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

发明人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

IPC分类号： H01L41/187

CPC分类号： H01L41/083 ,  C04B35/493 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/3262 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/3298 ,  C04B2235/6025 ,  C04B2235/6584 ,  C04B2235/79 ,  H01L41/0477 ,  H01L41/1876 ,  H01L41/273 ,  H01L41/297

摘要： A piezoelectric device is formed by simultaneously firing a piezoelectric ceramic mainly composed of a perovskite complex oxide represented by general formula ABO3 and electrodes mainly composed of copper. The piezoelectric ceramic is represented by Pbα−aMea[(MII1/3MV(2+b)/3)zTixZr1−x−z]O3 (wherein Me represents a metal element, MII is an acceptor element which is a divalent metal element, and MV is a donor element which is a pentavalent metal element), and satisfies equations 0.05≦z≦0.40, 0

摘要翻译： 通过同时焙烧主要由通式ABO 3 3表示的钙钛矿复合氧化物和主要由铜构成的电极的压电陶瓷，形成压电元件。 压电陶瓷由Pb（OH）2表示， （2 + b）/ 3 Ti x 1 x x 1 x z z] O 3（其中Me表示金属元素，M II是作为二价金属元素的受体元素，MⅤ是供体 元素，其为五价金属元素），并且满足等式0.05 <= z <= 0.40,0

公开(公告)号：US06969829B2

公开(公告)日：2005-11-29

申请号：US10080581

申请日：2002-02-25

申请人： Masaaki Tsuruno ,  Yoichi Deguchi

发明人： Masaaki Tsuruno ,  Yoichi Deguchi

IPC分类号： B05C9/14 ,  H01L21/00 ,  H01L21/02 ,  H01L21/31 ,  H01L21/316 ,  H01L21/683 ,  F27B5/14

CPC分类号： H01L21/67017 ,  H01L21/67109

摘要： A substrate processing apparatus including lift pins for lifting the substrate capable of moving up and down, a heating plate with holes through which the lift pins protrude and sink to a surface facing the substrate, a lid placed above the heating plate capable of moving up and down, a first inert gas introducing mechanism introducing a first inert gas to the inside portion of the lid and a second inert gas introducing mechanism introducing a second inert gas onto the surface of the heating plate through the holes. With such configuration, the inert gas can be introduced to both sides, the front side and the rear side, of the substrate, and oxygen is prevented from being forced to come around to the surface of the substrate from the rear side thereof. As a result, oxidation of the substrate can be prevented effectively.

摘要翻译： 一种基板处理装置，包括用于提升能够上下移动的基板的提升销，具有孔的加热板，升降销通过该加热板突出并沉降到面向基板的表面;盖子，其设置在能够向上移动的加热板的上方， 第一惰性气体引入机构，将第一惰性气体引入到盖的内部;以及第二惰性气体导入机构，通过该孔将第二惰性气体引入加热板的表面。 通过这样的结构，可以将惰性气体引入到基板的前侧和后侧，并且防止氧从其后侧被迫从基板的表面附近。 结果，可以有效地防止基板的氧化。

公开(公告)号：US06672779B2

公开(公告)日：2004-01-06

申请号：US10244755

申请日：2002-09-17

申请人： Issei Ueda ,  Shinichi Hayashi ,  Naruaki Iida ,  Yuji Matsuyama ,  Yoichi Deguchi

发明人： Issei Ueda ,  Shinichi Hayashi ,  Naruaki Iida ,  Yuji Matsuyama ,  Yoichi Deguchi

IPC分类号： G03D500

CPC分类号： H01L21/67161 ,  G07C9/00103 ,  G07C9/00111 ,  G08G3/00 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  Y10S134/902 ,  Y10S414/14

摘要： Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

摘要翻译： 在第一主晶片传送部和第二主晶片传送部的周围配置具有10层的热处理单元部和各层的涂布处理单元部，并且在热处理单元部中，对基板所需的时间的影响 通过在晶片W的温度由温度调节和转移装置调节的同时转移晶片W可以大大降低生产率下降的温度调节处理。

公开(公告)号：US07667377B2

公开(公告)日：2010-02-23

申请号：US12131371

申请日：2008-06-02

申请人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

发明人： Atsushi Yamamoto ,  Yoichi Deguchi ,  Koichi Hayashi

IPC分类号： H01L41/08

CPC分类号： H01L41/1876 ,  C04B35/493 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3294 ,  C04B2235/6025 ,  C04B2235/656 ,  H01L41/083 ,  H01L41/273 ,  Y10T29/42

摘要： A multilayer piezoelectric device including a body having internal electrode layers and piezoelectric ceramic layers alternately stacked. The internal electrode layers contain Cu as a major component, the piezoelectric ceramic layers contain a compound oxide represented by Pb(Ti, Zr)O3 as a major component, and a metal oxide (Nb2O5, Sb2O5, Ta2O5, or WO3) containing Nb, Sb, Ta, or W, which is at least one of a pentavalent metal element and a hexavalent metal element, is incorporated in the piezoelectric ceramic layers such that the concentration of the metal oxide decreases with distance from the internal electrode layers. Thereby, even in a case where internal electrodes contain Cu as a major component, it is possible to provide a multilayer piezoelectric device which can be obtained by low-temperature firing while ensuring a sufficient piezoelectric constant.

摘要翻译： 一种多层压电器件，包括具有交替堆叠的内部电极层和压电陶瓷层的主体。 内部电极层含有Cu作为主要成分，压电陶瓷层含有以Pb（Ti，Zr）O 3为主成分的复合氧化物，含有Nb的金属氧化物（Nb 2 O 5，Sb 2 O 5，Ta 2 O 5，WO 3） 作为五价金属元素和六价金属元素中的至少一种的Sb，Ta或W被并入到压电陶瓷层中，使得金属氧化物的浓度随着与内部电极层的距离而减小。 因此，即使在内部电极含有Cu作为主要成分的情况下，也可以提供能够通过低温烧制获得的多层压电器件，同时确保足够的压电常数。

公开(公告)号：US06990380B2

公开(公告)日：2006-01-24

申请号：US10023898

申请日：2001-12-21

申请人： Yuji Yoshimoto ,  Ryouichi Uemura ,  Kunie Ogata ,  Yoichi Deguchi

发明人： Yuji Yoshimoto ,  Ryouichi Uemura ,  Kunie Ogata ,  Yoichi Deguchi

IPC分类号： G05B11/01

CPC分类号： H01L21/67276 ,  G05B23/0264 ,  G05B2219/45031

摘要： An object of the present invention is to grasp easily a process history of a target object such as a semiconductor wafer. The processing apparatus of the present invention includes: a processing apparatus body which includes a plurality of process units for executing a prescribed process to a target object, and transport mechanism for transporting said target object between the process units; a first controller for controlling the processing apparatus as a whole; a second controller for controlling the process units; an information storage section for taking in a signal transmitted and received between the first and second controllers; and a host computer for monitoring operation states of the process units. The present invention is extended to a processing system including a plurality of the processing apparatuses connected with a host computer which is further connected with a monitor computer through a communication network.

公开(公告)号：US06670287B2

公开(公告)日：2003-12-30

申请号：US10151967

申请日：2002-05-22

申请人： Masami Akimoto ,  Yoichi Deguchi

发明人： Masami Akimoto ,  Yoichi Deguchi

IPC分类号： H01L2131

CPC分类号： H01L21/6715 ,  B05D1/005 ,  B05D3/0263 ,  B05D3/0486 ,  B05D3/0493 ,  B05D3/068 ,  B05D5/00 ,  H01L21/31 ,  H01L21/3105

摘要： A closed space is formed in a reduced pressure drying station, and the closed space is brought to a vacuum state. In this state, an EB unit irradiates a wafer mounted on a hot plate with an electron beam to foam an insulating film material. Subsequently, the hot plate is raised to a predetermined temperature, and drying processing is performed under a reduced pressure. As described above, since the foaming processing is performed in the reduced pressure drying station, bubbles remain in the insulating film, so that the existence of the bubbles can decrease the relative dielectric constant.

公开(公告)号：US6024502A

公开(公告)日：2000-02-15

申请号：US959839

申请日：1997-10-29

申请人： Masami Akimoto ,  Yoichi Deguchi

发明人： Masami Akimoto ,  Yoichi Deguchi

IPC分类号： H01L21/00 ,  G03D7/00 ,  G03D5/00

CPC分类号： H01L21/67178 ,  H01L21/6715 ,  Y10S414/135

摘要： Disclosed is an apparatus for processing a substrate in which a processing consisting of a plurality of process steps is applied to a substrate to be processed. The apparatus comprises a transfer zone extending in a vertical direction, a plurality of process groups arranged to surround the transfer zone for processing the substrate, each process group consisting of a plurality of process units stacked one upon the other, and each process unit having an opening communicating with the transfer zone for transferring the substrate into and out of the process unit, a main arm mechanism movably mounted in the transfer zone for transferring the substrate into and out of the process unit through the opening, and down flow forming means for forming a down flow of a clean air within the transfer zone. At least one of the plural process groups includes a plurality of thermal units for heating or cooling the substrate, a transfer unit for transferring the substrate into and out of the transfer zone, and a gas process unit for processing the substrate with a gas, the opening of the gas process unit being positioned lower than the openings of the thermal units and the transfer unit.

摘要翻译： 公开了一种用于处理基板的装置，其中将由多个处理步骤组成的处理应用于待处理的基板。 该装置包括沿垂直方向延伸的转移区域，多个处理组，其布置成围绕用于处理衬底的转移区域，每个处理组由多个堆叠在一起的多个处理单元组成，每个处理单元具有 与转移区连通的开口，用于将基板输送到处理单元中;主臂机构，可移动地安装在转移区域中，用于通过开口将基板输入和移出处理单元;以及下流形成装置，用于形成 转移区内清洁空气的向下流动。 多个处理组中的至少一个包括用于加热或冷却基板的多个热单元，用于将基板输送到转移区域中的转移单元和用于用气体处理基板的气体处理单元， 气体处理单元的开口定位成比热单元和转印单元的开口低。

公开(公告)号：US5665167A

公开(公告)日：1997-09-09

申请号：US194665

申请日：1994-02-14

申请人： Yoichi Deguchi ,  Satoru Kawakami ,  Shiro Koyama ,  Kenji Ishikawa

发明人： Yoichi Deguchi ,  Satoru Kawakami ,  Shiro Koyama ,  Kenji Ishikawa

IPC分类号： C23C14/50 ,  C23C16/458 ,  H01L21/683 ,  C23C16/00 ,  C23F1/02 ,  H05H1/00

CPC分类号： H01J37/32082 ,  C23C14/50 ,  C23C16/4586 ,  H01L21/6833 ,  H01J2237/0044

摘要： A static chuck and a workpiece push-up pin are disposed on a susceptor which is one of opposed electrodes generating plasma. The push-up pin and the susceptor are electrically connected. A grounding circuit which discharges electric charges remaining on the susceptor is disposed in parallel with an RF power supply circuit which supplies RF power to the susceptor. Thus, electric charges remaining in the power supply circuit can be discharged and an abnormal discharging between the push-up pin and the susceptor can be prevented.

摘要翻译： 静电卡盘和工件上推销设置在作为产生等离子体的相对电极之一的基座上。 上推销和基座电连接。 将保持在基座上的电荷放电的接地电路与向基座提供RF电力的RF电源电路并联设置。 因此，可以放电剩余在电源电路中的电荷，并且可以防止上推销和基座之间的异常放电。