发明授权
- 专利标题： Method for manufacturing a ferroelectric capacitor having improved polarization characteristics and a method for manufacturing a ferroelectric memory device incorporating such capacitor
- 专利标题（中）： 具有改善偏振特性的铁电电容器的制造方法以及包含这种电容器的铁电存储器件的制造方法
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申请号： US09092686申请日： 1998-06-05
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公开(公告)号： US06472229B1公开(公告)日： 2002-10-29
- 发明人: Katsuhiro Aoki , Yukio Fukuda , Ken Numata
- 申请人： Katsuhiro Aoki , Yukio Fukuda , Ken Numata
- 优先权： JP9-164997 19970606
- 主分类号： H01L2100
- IPC分类号： H01L2100
摘要：
The purpose of this invention is to provide a method for manufacturing capacitors free of polarization fatigue even when the treatment is performed at a low temperature. Amorphous layer 32 made of lead zirconate titanate and containing excess lead is formed on lower electrode 13 made of iridium. The amorphous layer is crystallized by a heat treatment to form PZT film 14. Structural transition layer 33 containing excess Pb formed on the surface of PZT film 14 during the aforementioned crystallization is removed by means of dry etching. In this way, a PZT capacitor is obtained.
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