发明授权
- 专利标题： Voltage generator for semiconductor device
- 专利标题（中）： 半导体器件用电压发生器
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申请号： US09313282申请日： 1999-05-18
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公开(公告)号： US06477079B2公开(公告)日： 2002-11-05
- 发明人: Tetsuya Kaneko , Junichi Okamura
- 申请人： Tetsuya Kaneko , Junichi Okamura
- 主分类号： G11C1124
- IPC分类号： G11C1124
摘要：
A voltage generator for outputting an output voltage at an output terminal thereof includes a driver MOS transistor of a first conductivity type having a first end connected to said output terminal and a capacitor connected between the output terminal and a second voltage node. The capacitor comprises a plurality of trench capacitors formed in a semiconductor substrate.
公开/授权文献
- US20010021138A1 VOLTAGE GENERATOR FOR SEMICONDUCTOR DEVICE 公开/授权日：2001-09-13