发明授权
US06479878B1 Semiconductor device and semiconductor electret condenser microphone
失效
半导体器件和半导体驻极体电容麦克风
- 专利标题： Semiconductor device and semiconductor electret condenser microphone
- 专利标题（中）： 半导体器件和半导体驻极体电容麦克风
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申请号： US09660061申请日： 2000-09-12
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公开(公告)号： US06479878B1公开(公告)日： 2002-11-12
- 发明人: Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
- 申请人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
- 优先权： JP11-261374 19990916
- 主分类号： H01L2982
- IPC分类号： H01L2982
摘要：
A stationary electrode layer 12 is formed on a semiconductor substrate 11, and a vibrating diaphragm 16 is disposed on spacers 14. The vibrating diaphragm 16 is placed so as to protrude from an end of the semiconductor substrate 11, and terminal pads 20 to 23 are placed with being exposed from the vibrating diaphragm 16.