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公开(公告)号：US06566728B1
公开(公告)日：2003-05-20
申请号：US09678555
申请日：2000-10-04
申请人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
发明人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
IPC分类号： H01L2900
CPC分类号： H04R19/005 , H04R19/04
摘要： First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P+-type separated area.
摘要翻译： 首先，在半导体衬底上形成固定电极层，并且通过形成每个电路元件的电极布线，在固定电极层周围的电路元件区域中形成集成网络。 在多个位置上在隔离膜上设置间隔物。 在电路元件区域和固定电极层区域之间的区域中形成虚设的岛。 将供电电位Vcc施加到虚拟岛，将接地电位GND施加到P +型分离区域。
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公开(公告)号：US06479878B1
公开(公告)日：2002-11-12
申请号：US09660061
申请日：2000-09-12
申请人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
发明人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
IPC分类号： H01L2982
CPC分类号： H04R7/16 , H04R19/005 , H04R19/04
摘要： A stationary electrode layer 12 is formed on a semiconductor substrate 11, and a vibrating diaphragm 16 is disposed on spacers 14. The vibrating diaphragm 16 is placed so as to protrude from an end of the semiconductor substrate 11, and terminal pads 20 to 23 are placed with being exposed from the vibrating diaphragm 16.
摘要翻译： 固定电极层12形成在半导体衬底11上，振动膜16设置在间隔件14上。振动膜16被放置成从半导体衬底11的一端突出，端子衬垫20至23为 放置在从振动膜16暴露的位置。
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公开(公告)号：US06420203B1
公开(公告)日：2002-07-16
申请号：US10032632
申请日：2001-12-28
申请人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
发明人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
IPC分类号： H01L2100
CPC分类号： H04R7/16 , H04R19/005 , H04R19/04
摘要： A stationary electrode layer 12 is formed on a semiconductor substrate 11, and a vibrating diaphragm 16 is disposed on spacers 14. The vibrating diaphragm 16 is placed so as to protrude from an end of the semiconductor substrate 11, and terminal pads 20 to 23 are placed with being exposed from the vibrating diaphragm 16.
摘要翻译： 固定电极层12形成在半导体衬底11上，振动膜16设置在间隔件14上。振动膜16被放置成从半导体衬底11的一端突出，端子衬垫20至23为 放置在从振动膜16暴露的位置。
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公开(公告)号：US06417560B1
公开(公告)日：2002-07-09
申请号：US09679117
申请日：2000-10-04
申请人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
发明人： Shigeaki Okawa , Toshiyuki Ohkoda , Yoshiaki Ohbayashi , Mamoru Yasuda , Shinichi Saeki , Shuji Osawa
IPC分类号： H01L23552
CPC分类号： H04R19/005 , H04R19/04
摘要： A fixed electrode layer 12 is formed on a semiconductor substrate 11. A vibrating film is formed on the fixed electrode layer through a spacer 14. Since the vibrating film is a light-permeable film, in order to prevent the malfunction of an electronic circuit formed in the semiconductor substrate by incident light, the region where the electronic circuit is to be formed is covered with a shield metal 33.
摘要翻译： 固定电极层12形成在半导体基板11上。通过间隔件14在固定电极层上形成振动膜。由于振动膜是透光膜，为了防止形成电子电路的故障 在通过入射光在半导体衬底中，要形成电子电路的区域被屏蔽金属33覆盖。
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公开(公告)号：US07570773B2
公开(公告)日：2009-08-04
申请号：US10565059
申请日：2004-07-14
IPC分类号： H04R25/00
CPC分类号： H04R19/016 , H04R19/04
摘要： A sound detecting mechanism capable of forming a diaphragm and a back electrode on a substrate by a simple process includes acoustic holes corresponding to perforations formed on a front surface of a substrate. A second protective film, a sacrificial layer and a metal film are laminated on the front surface in a portion corresponding to the acoustic holes. The substrate is etched from the back surface thereof to a depth reaching the acoustic holes to form an acoustic opening. Subsequently, by effecting an etching from the back surface of the substrate through the acoustic holes, the sacrificial layer is removed and a void area is formed between the diaphragm made of the metal film, the substrate and the formed perforations. The sacrificial layer that remains after the etching is used as a spacer for maintaining a gap between the back electrode and the diaphragm.
摘要翻译： 能够通过简单的工艺在基板上形成隔膜和背面电极的声音检测机构包括对应于形成在基板前表面上的穿孔的声孔。 第二保护膜，牺牲层和金属膜层叠在与声孔对应的部分的前表面上。 衬底从其后表面被蚀刻到到达声孔的深度以形成声学开口。 随后，通过通过声孔从衬底的背面进行蚀刻，除去牺牲层，并且在由金属膜，衬底和形成的穿孔构成的隔膜之间形成空隙区域。 蚀刻后残留的牺牲层用作用于保持背电极和隔膜之间的间隙的间隔物。
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公开(公告)号：US07386136B2
公开(公告)日：2008-06-10
申请号：US10544253
申请日：2004-05-25
IPC分类号： H04R25/00
CPC分类号： H04R19/005 , H04R19/04 , H04R2499/11
摘要： A sound detecting mechanism is provided which forms a diaphragm with a required thickness by thickness control and yet restrains distortion of the diaphragm to provide high sensitivity.The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. The diaphragm B is mounted on the substrate A while the back electrode C is mounted in a position opposed to the diaphragm B across a void F to be supported by the substrate A, the back electrode C being formed by polycrystal silicon of 5 μm to 20 μm in thickness.
摘要翻译： 提供一种声音检测机构，其通过厚度控制形成所需厚度的膜片，并且抑制隔膜的变形以提供高灵敏度。 声音检测机构包括在基板A上形成电容器的一对电极，其中一个电极是形成其中对应于声孔的穿孔Ca的背面电极C，另一个电极是隔膜B.隔膜B是 安装在基板A上，而背面电极C通过空隙F安装在与隔膜B相对的位置上以由基板A支撑，背面电极C由5μm至20μm的多晶硅形成。
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公开(公告)号：US20060233400A1
公开(公告)日：2006-10-19
申请号：US10565059
申请日：2004-07-14
IPC分类号： H04R25/00
CPC分类号： H04R19/016 , H04R19/04
摘要： A sound detecting mechanism capable of forming a diaphragm and a back electrode on a substrate by a simple process includes acoustic holes corresponding to perforations formed on a front surface of a substrate. A second protective film, a sacrificial layer and a metal film are laminated on the front surface in a portion corresponding to the acoustic holes. The substrate is etched from the back surface thereof to a depth reaching the acoustic holes to form an acoustic opening. Subsequently, by effecting an etching from the back surface of the substrate through the acoustic holes, the sacrificial layer is removed and a void area is formed between the diaphragm made of the metal film, the substrate and the formed perforations. The sacrificial layer that remains after the etching is used as a spacer for maintaining a gap between the back electrodes and the diaphragm.
摘要翻译： 能够通过简单的工艺在基板上形成隔膜和背面电极的声音检测机构包括对应于形成在基板前表面上的穿孔的声孔。 第二保护膜，牺牲层和金属膜层叠在与声孔对应的部分的前表面上。 衬底从其后表面被蚀刻到到达声孔的深度以形成声学开口。 随后，通过通过声孔从衬底的背面进行蚀刻，除去牺牲层，并且在由金属膜，衬底和形成的穿孔构成的隔膜之间形成空隙区域。 蚀刻后残留的牺牲层用作用于保持背电极和隔膜之间的间隙的间隔物。
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公开(公告)号：US20060145570A1
公开(公告)日：2006-07-06
申请号：US10544253
申请日：2004-05-25
IPC分类号： H01L41/08
CPC分类号： H04R19/005 , H04R19/04 , H04R2499/11
摘要： A sound detecting mechanism is provided which forms a diaphragm with a required thickness by thickness control and yet restrains distortion of the diaphragm to provide high sensitivity. The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. The diaphragm B is mounted on the substrate A while the back electrode C is mounted in a position opposed to the diaphragm B across a void F to be supported by the substrate A, the back electrode C being formed by polycrystal silicon of 5 μm to 20 μm in thickness.
摘要翻译： 提供一种声音检测机构，其通过厚度控制形成所需厚度的膜片，并且抑制隔膜的变形以提供高灵敏度。 声音检测机构包括在基板A上形成电容器的一对电极，其中一个电极是形成其中对应于声孔的穿孔Ca的背面电极C，另一个电极是隔膜B.隔膜B是 安装在基板A上，而背面电极C通过空隙F安装在与隔膜B相对的位置上以由基板A支撑，背面电极C由5μm至20μm的多晶硅形成。
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公开(公告)号：US20060050905A1
公开(公告)日：2006-03-09
申请号：US10544120
申请日：2004-05-25
IPC分类号： H04R25/00
CPC分类号： H04R19/005
摘要： A sound detecting mechanism is provided which forms a diaphragm with a required thickness and yet restraining distortion of the diaphragm to provide high sensitivity. The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. A silicon nitride film 303 is provided on the side adjacent a base of the substrate A with respect to a membrane acting as the diaphragm B formed on the substrate A.
摘要翻译： 提供了一种声音检测机构，其形成具有所需厚度并且抑制隔膜的变形以提供高灵敏度的隔膜。
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公开(公告)号：US06870938B2
公开(公告)日：2005-03-22
申请号：US09926429
申请日：2001-04-19
CPC分类号： H04R1/04 , H04R1/06 , H04R3/00 , H04R19/005 , H04R19/016
摘要： A semiconductor electret capacitor microphone includes a vibration membrane, a semiconductor chip on which are formed a necessary electronic circuit, a fixed electrode, a spacer for preserving a predetermined space between the fixed electrode and the vibration membrane, and a case for enclosing the semiconductor chip and the vibration membrane in such a configuration that the fixed electrode is connected to the ground and the vibration membrane is connected to an input electrode of the semiconductor chip.
摘要翻译： 一种半导体驻极体电容麦克风，包括：振动膜，形成必要的电子电路的半导体芯片，固定电极，用于保持固定电极和振动膜之间的预定空间的间隔件;以及用于封装半导体芯片的壳体 以及振动膜，其固定电极连接到地面并且振动膜连接到半导体芯片的输入电极。
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