发明授权
- 专利标题: Method of fabricating self-aligned contacts
- 专利标题(中): 制造自对准触点的方法
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申请号: US09672548申请日: 2000-09-28
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公开(公告)号: US06485654B1公开(公告)日: 2002-11-26
- 发明人: Meng-Chang Liu , Shea-Jue Wang
- 申请人: Meng-Chang Liu , Shea-Jue Wang
- 主分类号: H01L21302
- IPC分类号: H01L21302
摘要:
A process for producing a self-aligned contact comprises the steps of forming leads on a substrate, forming an etching stop layer on the leads by depositing, then forming a sacrificed oxide layer; after the structure of the leads is defined, a spacer is formed on both sides of the structure; a sacrificed oxide layer is formed, allowing the spacer to protrude in the form of horn. Next, a dielectric layer having a flat upper surface is deposited on the substrate and the structure of leads, a contact hole being formed between the leads so as to connect the substrate, a conductive material being filled in the contact hole to form a plug.