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    Method of fabricating self-aligned contacts
    5.
    发明授权
    Method of fabricating self-aligned contacts 有权
    制造自对准触点的方法

    公开(公告)号：US06485654B1

    公开(公告)日：2002-11-26

    申请号：US09672548

    申请日：2000-09-28

    申请人： Meng-Chang Liu ,  Shea-Jue Wang

    发明人： Meng-Chang Liu ,  Shea-Jue Wang

    IPC分类号： H01L21302

    CPC分类号： H01L21/76897 ,  H01L27/10873 ,  H01L27/10888 ,  Y10S438/947

    摘要： A process for producing a self-aligned contact comprises the steps of forming leads on a substrate, forming an etching stop layer on the leads by depositing, then forming a sacrificed oxide layer; after the structure of the leads is defined, a spacer is formed on both sides of the structure; a sacrificed oxide layer is formed, allowing the spacer to protrude in the form of horn. Next, a dielectric layer having a flat upper surface is deposited on the substrate and the structure of leads, a contact hole being formed between the leads so as to connect the substrate, a conductive material being filled in the contact hole to form a plug.

    摘要翻译： 用于制造自对准接触的方法包括以下步骤：在衬底上形成引线，通过沉积形成牺牲氧化物层，在引线上形成蚀刻停止层; 在限定了引线的结构之后，在结构的两侧形成间隔物; 形成牺牲的氧化物层，允许间隔件以喇叭形式突出。 接下来，将具有平坦的上表面的电介质层沉积在基板上，并且引线的结构，在引线之间形成接触孔，以便连接基板，填充在接触孔中的导电材料形成插头。

    BAD BLOCK IDENTIFICATION METHODS
    8.
    发明申请
    BAD BLOCK IDENTIFICATION METHODS 有权
    边框识别方法

    公开(公告)号：US20100064187A1

    公开(公告)日：2010-03-11

    申请号：US12487773

    申请日：2009-06-19

    申请人： Meng-Chang Liu ,  Pin-Chou Liu

    发明人： Meng-Chang Liu ,  Pin-Chou Liu

    IPC分类号： G11C29/04 ,  G06F11/22

    CPC分类号： G06F11/006

    摘要： A bad block identification method for a memory is provided. The memory includes at least one memory block for storing data. A data decoding function is performed to the data, and it is determined whether the data decoding function was performed successfully. If the data decoding function was not performed successfully, at least one predetermined location in the memory block is checked. It is determined whether the predetermined location is marked by predetermined information. If the predetermined location is not marked by the predetermined information, the memory block is identified as a bad block.

    摘要翻译： 提供了一种用于存储器的坏块识别方法。 存储器包括用于存储数据的至少一个存储块。 对数据进行数据解码功能，确定数据解码功能是否成功执行。 如果数据解码功能未成功执行，则检查存储器块中的至少一个预定位置。 确定预定位置是否被预定信息标记。 如果预定位置未被预定信息标记，则存储块被识别为坏块。