发明授权
US06486074B1 Methods of masking and etching a semiconductor substrate, and ion implant lithography methods of processing a semiconductor substrate 有权
掩模和蚀刻半导体衬底的方法以及处理半导体衬底的离子注入光刻方法

  • 专利标题: Methods of masking and etching a semiconductor substrate, and ion implant lithography methods of processing a semiconductor substrate
  • 专利标题(中): 掩模和蚀刻半导体衬底的方法以及处理半导体衬底的离子注入光刻方法
  • 申请号: US09614359
    申请日: 2000-07-12
  • 公开(公告)号: US06486074B1
    公开(公告)日: 2002-11-26
  • 发明人: J. Brett Rolfson
  • 申请人: J. Brett Rolfson
  • 主分类号: H01L21302
  • IPC分类号: H01L21302
Methods of masking and etching a semiconductor substrate, and ion implant lithography methods of processing a semiconductor substrate
摘要:
A method of masking and etching a semiconductor substrate includes forming a layer to be etched over a semiconductor substrate. An imaging layer is formed over the layer to be etched. Selected regions of the imaging layer are removed to leave a pattern of openings extending only partially into the imaging layer. After the removing, the layer to be etched is etched using the imaging layer as an etch mask. In one implementation, an ion implant lithography method of processing a semiconductor includes forming a layer to be etched over a semiconductor substrate. An imaging layer of a selected thickness is formed over the layer to be etched. Selected regions of the imaging layer are ion implanted to change solvent solubility of implanted regions versus non-implanted regions of the imaging layer, with the selected regions not extending entirely through the imaging layer thickness. The ion implanted regions of the imaging layer are removed to leave a pattern of openings extending only partially into the imaging layer. After the removing, the layer to be etched is etched using the imaging layer as an etch mask.
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