发明授权
US06487137B2 Semiconductor memory device having a second voltage supplier supplying transfer gates with a second voltage higher than a first voltage
有权
半导体存储器件具有第二电压供应器，供给具有高于第一电压的第二电压的转移栅极
- 专利标题： Semiconductor memory device having a second voltage supplier supplying transfer gates with a second voltage higher than a first voltage
- 专利标题（中）： 半导体存储器件具有第二电压供应器，供给具有高于第一电压的第二电压的转移栅极
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申请号： US09924469申请日： 2001-08-09
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公开(公告)号： US06487137B2公开(公告)日： 2002-11-26
- 发明人: Hiroyoshi Tsuboi , Shinya Fujioka , Koichi Nishimura
- 申请人： Hiroyoshi Tsuboi , Shinya Fujioka , Koichi Nishimura
- 优先权： JP2000-259579 20000829
- 主分类号： G11C700
- IPC分类号： G11C700
摘要：
A semiconductor memory device which includes at least two memory cell arrays, a sense amplifier shared by the memory cell arrays and at least two transfer gates connected respectively between each of the memory cell arrays and the sense amplifier. The semiconductor memory device further includes a first voltage supplier supplying a first voltage to the transfer gates, and a second voltage supplier supplying a second voltage to the transfer gates, with second voltage being higher than the first voltage.
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