- 专利标题: Ultra sensitive silicon sensor
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申请号: US09738058申请日: 2000-12-15
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公开(公告)号: US06489615B2公开(公告)日: 2002-12-03
- 发明人: Nathan Bluzer
- 申请人: Nathan Bluzer
- 主分类号: G01J500
- IPC分类号: G01J500
摘要:
Electro-thermal feedback is utilized for removing thermal conductance between a bolometer's absorber element of a pixel in a thermal radiation sensor assembly and the environments through its mechanical support structure and electrical interconnects, thereby limiting the thermal conductance primarily through photon radiation. Zeroing the thermal conductance associated with the mechanical support structure and electrical interconnects is achieved by electro-thermal feedback that adjust the temperature of an intermediate stage of the mechanical support structure and electrical interconnects to equal the bolometer's absorber element temperature.
公开/授权文献
- US20020117622A1 Ultra sensitive silicon sensor 公开/授权日:2002-08-29
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