发明授权
- 专利标题： Substrate for use in wafer attracting apparatus and manufacturing method thereof
- 专利标题（中）： 用于晶片吸引装置的基板及其制造方法
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申请号： US09531462申请日： 2000-03-20
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公开(公告)号： US06491571B1公开(公告)日： 2002-12-10
- 发明人: Masashi Ohno , Naohito Yamada , Takahiro Inoue , Kouji Kato
- 申请人： Masashi Ohno , Naohito Yamada , Takahiro Inoue , Kouji Kato
- 优先权： JP9-67478 19970306
- 主分类号： B24B722
- IPC分类号： B24B722
摘要：
A wafer attracting apparatus includes a substrate made of a ceramic material and adapted to attract and hold a wafer onto an attracting surface thereof, wherein the attracting surface is constituted by a ductile worked surface, the ductile worked surface has concave portions, a diameter of each of the concave portions is 0.1 &mgr;m or less, and when the wafer is attracted onto the attracting surface of the substrate and released therefrom, the number of particles attaching to that wafer is 9.3 or less per 1 cm2.
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