发明授权
- 专利标题: Method for in-situ monitoring layer uniformity of sputter coating based on intensity distribution of plasma spectrum
- 专利标题(中): 基于等离子体光谱强度分布的溅射涂层原位监测层均匀性的方法
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申请号: US09642793申请日: 2000-08-22
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公开(公告)号: US06493070B1公开(公告)日: 2002-12-10
- 发明人: Cheng-Chung Jaing , Chuen-Horng Tsai , Jyh-Shin Chen , Ming-Hwu Cheng , Ho-Yen Hsiao , Py-Shiun Yeh , Jiann-Shiun Kao
- 申请人: Cheng-Chung Jaing , Chuen-Horng Tsai , Jyh-Shin Chen , Ming-Hwu Cheng , Ho-Yen Hsiao , Py-Shiun Yeh , Jiann-Shiun Kao
- 优先权: TW88120334A 19991120
- 主分类号: G01N2100
- IPC分类号: G01N2100
摘要:
This invention discloses an in-situ monitoring method on the layer uniformity of sputter coatings in a vacuum chamber based on deconvolution of measuring plasma emission spectra. The method of the present invention started from an Ar-normalized Sr intensity distribution derived from deconvoluting the plasma spectra by using Abel inversion method, which was considered as the spatial distribution of the sputtering mass of the source target. The thickness profile on the substrate was then calculated with n-th power of cosine law model. It was observed good agreement between the calculated thickness profile based on spectroscopic measurement and experimental observation. The film uniformity for the same sputter conditions can be monitored by comparing in-situ measurement of Ar-normalized Sr intensity distribution with the standard curve, or by directly calculating thickness distribution on the substrates.