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1.发明授权Method for in-situ monitoring layer uniformity of sputter coating based on intensity distribution of plasma spectrum 有权基于等离子体光谱强度分布的溅射涂层原位监测层均匀性的方法公开(公告)号：US06493070B1
公开(公告)日：2002-12-10
申请号：US09642793
申请日：2000-08-22
申请人： Cheng-Chung Jaing , Chuen-Horng Tsai , Jyh-Shin Chen , Ming-Hwu Cheng , Ho-Yen Hsiao , Py-Shiun Yeh , Jiann-Shiun Kao
发明人： Cheng-Chung Jaing , Chuen-Horng Tsai , Jyh-Shin Chen , Ming-Hwu Cheng , Ho-Yen Hsiao , Py-Shiun Yeh , Jiann-Shiun Kao
IPC分类号： G01N2100
CPC分类号： G01N21/716
摘要： This invention discloses an in-situ monitoring method on the layer uniformity of sputter coatings in a vacuum chamber based on deconvolution of measuring plasma emission spectra. The method of the present invention started from an Ar-normalized Sr intensity distribution derived from deconvoluting the plasma spectra by using Abel inversion method, which was considered as the spatial distribution of the sputtering mass of the source target. The thickness profile on the substrate was then calculated with n-th power of cosine law model. It was observed good agreement between the calculated thickness profile based on spectroscopic measurement and experimental observation. The film uniformity for the same sputter conditions can be monitored by comparing in-situ measurement of Ar-normalized Sr intensity distribution with the standard curve, or by directly calculating thickness distribution on the substrates.
摘要翻译： 本发明公开了一种基于测量等离子体发射光谱的去卷积的真空室中溅射涂层的层均匀性的现场监测方法。 本发明的方法从通过使用被认为是源目标的溅射质量的空间分布的Abel反演方法来解卷积等离子体光谱的Ar归一化的Sr强度分布开始。 然后用n次余弦律模型计算衬底上的厚度分布。 在基于光谱测量和实验观察的计算的厚度分布之间观察到良好的一致性。 通过比较Ar归一化Sr强度分布的原位测量与标准曲线，或通过直接计算衬底上的厚度分布，可以监测相同溅射条件下的膜均匀性。
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2.发明授权Method for preparing ZnSe thin films by ion-assisted continuous wave CO2 laser deposition 有权通过离子辅助连续波CO2激光沉积制备ZnSe薄膜的方法公开(公告)号：US06503578B1
公开(公告)日：2003-01-07
申请号：US09565473
申请日：2000-05-05
申请人： Pey-Shiun Yeh , Jyh-Shin Chen , Cheng-Chung Jaing , Hsiang-Ming Tseng , Long-Sheng Liao , Ming-Chih Lee
发明人： Pey-Shiun Yeh , Jyh-Shin Chen , Cheng-Chung Jaing , Hsiang-Ming Tseng , Long-Sheng Liao , Ming-Chih Lee
IPC分类号： C23C1428
CPC分类号： C23C14/3435 , C23C14/0629 , C23C14/28
摘要： Zincselenide (ZnSe) thin films were grown on quartz glass and GaAs(100) substrates by continuous wave (CW) CO2 laser with ion beam assisted deposition. The ZnSe thin films are applied for multilayer anti-reflection coatings and blue light emitting devices. There are advantages to this technique over the Ion-Beam coating, MBE, MOCVD and PLD methods for fabricating layered semiconductors. It is cheaper and safer than Ion-Beam coating, MBE, MOCVD and others. It is cheaper and safer to heat the target locally by using a continuous wave laser so that contaminations and heat radiation are reduced. It is also cheaper and safer to avoid the splash of PLD.
摘要翻译： 使用离子束辅助沉积的连续波（CW）CO2激光将石英玻璃和GaAs（100）衬底上的硒化锌（ZnSe）薄膜生长。 ZnSe薄膜被应用于多层抗反射涂层和蓝色发光器件。 对于用于制造层状半导体的离子束涂层，MBE，MOCVD和PLD方法，这种技术有优势。 它比Ion-Beam涂层，MBE，MOCVD等更便宜和更安全。 通过使用连续波激光器来局部加热靶，从而降低污染物和热辐射是更便宜和更安全的。 避免PLD飞溅也更便宜，更安全。
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3.发明授权公开(公告)号：US06514814B2
公开(公告)日：2003-02-04
申请号：US09884029
申请日：2001-06-20
IPC分类号： H01L218242
CPC分类号： H01L28/56 , C23C14/088 , H01L28/60 , H01L28/75
摘要： A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.
摘要翻译： 用于形成薄膜电容器的制备包括：形成诸如钛酸锶钡[（Ba，Sr）TiO 3]膜的非晶铁电体膜，用作金属电极和多晶铁电体膜之间的界面，例如（Ba， Sr）TiO3膜。 鉴于多晶强电介质膜具有高介电常数的事实，多晶铁电体膜用作薄膜电容器的电介质层。 非晶铁电体膜用作抑制薄膜电容器的漏电流的缓冲层。 通过溅射和诸如氩的工作气体和诸如氧的反应性气体引入到在室温下产生等离子体的反应室中生长非晶铁电膜。
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4.发明授权公开(公告)号：US06309895B1
公开(公告)日：2001-10-30
申请号：US09237662
申请日：1999-01-27
IPC分类号： H01G706
CPC分类号： H01L28/56 , C23C14/088 , H01L28/60 , H01L28/75
摘要： A preparation for forming a thin film capacitor includes forming an amorphous ferroelectric film, such as barium strontium titanate [(Ba,Sr)TiO3] film, for use as an interface between a metal electrode and a polycrystalline ferroelectric film, such as (Ba,Sr) TiO3 film. The polycrystalline ferroelectric film serves as a dielectric layer of the thin film capacitor in view of the fact that the polycrystalline ferroelectric film has a high dielectric constant. The amorphous ferroelectric film serves as a buffer layer for inhibiting the leakage current of the thin film capacitor. The amorphous ferroelectric film is grown by sputtering and by introducing a working gas, such as argon, and a reactive gas, such as oxygen, into a reaction chamber in which a plasma is generated at room temperature.
摘要翻译： 用于形成薄膜电容器的制备包括：形成诸如钛酸锶钡[（Ba，Sr）TiO 3]膜的非晶铁电体膜，用作金属电极和多晶铁电体膜之间的界面，例如（Ba， Sr）TiO3膜。 鉴于多晶强电介质膜具有高介电常数的事实，多晶铁电体膜用作薄膜电容器的电介质层。 非晶铁电体膜用作抑制薄膜电容器的漏电流的缓冲层。 通过溅射和诸如氩的工作气体和诸如氧的反应性气体引入到在室温下产生等离子体的反应室中生长非晶铁电膜。
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5.发明授权公开(公告)号：US06466308B1
公开(公告)日：2002-10-15
申请号：US09547849
申请日：2000-04-12
申请人： Cheng-Chung Jaing , Cheng-Chung Lee , Chuen-Lin Tien , Ing-Jer Ho
发明人： Cheng-Chung Jaing , Cheng-Chung Lee , Chuen-Lin Tien , Ing-Jer Ho
IPC分类号： G01L124
摘要： The present invention disclose a method for measuring a thermal expansion coefficient of a thin film, in which the thin film is first deposited on two substrates having different thermal expansion coefficients under the same conditions. For each of the two deposited substrates, a relationship between the thin film stresses and the measuring temperatures is established by using a phase shifting interferometry technique, in which the stresses in the thin films are derived by comparing the deflections of the substrates prior to and after the deposition. Based on the two relationships the thermal expansion coefficient, and elastic modulus, E f ( 1 - v f ) , can be calculated, wherein Ef and &ngr;f are the Young's modulus and Poisson's ratio of the thin film, respectively.
摘要翻译： 本发明公开了一种测量薄膜的热膨胀系数的方法，其中薄膜首先在相同条件下沉积在具有不同热膨胀系数的两个基板上。 对于两个沉积的衬底中的每一个，通过使用相移干涉测量技术来建立薄膜应力和测量温度之间的关系，其中薄膜中的应力通过比较在之前和之后的衬底的偏转而导出 沉积。 基于这两个关系，可以计算热膨胀系数和弹性模量，其中Ef和＆ngr; f分别是薄膜的杨氏模量和泊松比。
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