发明授权
- 专利标题： Multi-layered thin-film functional device and magnetoresistance effect element
- 专利标题（中）： 多层薄膜功能元件和磁阻效应元件
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申请号： US09927379申请日： 2001-08-13
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公开(公告)号： US06495275B2公开(公告)日： 2002-12-17
- 发明人: Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
- 申请人： Yuzo Kamiguchi , Akiko Saito , Katsuhiko Koui , Masatoshi Yoshikawa , Hiromi Yuasa , Hideaki Fukuzawa , Susumu Hashimoto , Hitoshi Iwasaki , Hiroaki Yoda , Masashi Sahashi
- 优先权： JP10-72822 19980320; JP10-185481 19980630
- 主分类号： G11B5127
- IPC分类号： G11B5127
摘要：
A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.
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