发明授权
- 专利标题： Semiconductor device and method for patterning the semiconductor device in which line patterns terminate at different lengths to prevent the occurrence of a short or break
- 专利标题（中）： 图案化半导体器件的半导体器件和方法，其中线图案以不同长度终止以防止发生短路或断线
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申请号： US09342239申请日： 1999-06-29
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公开(公告)号： US06495870B1公开(公告)日： 2002-12-17
- 发明人: Tomonori Sekiguchi , Toshihiko Tanaka , Toshiaki Yamanaka , Takeshi Sakata , Katsutaka Kimura
- 申请人： Tomonori Sekiguchi , Toshihiko Tanaka , Toshiaki Yamanaka , Takeshi Sakata , Katsutaka Kimura
- 优先权： JP10-188518 19980703
- 主分类号： H01L2710
- IPC分类号： H01L2710
摘要：
In a masking pattern (a) for patterning word and data lines, length is changed between adjacent word lines so as to be shifted from each other at their tips, and furthermore, the tip of each word line is cut obliquely. It is thus possible to prevent the resist pattern from separation and contact of adjacent patterns. Consequently, it is also possible to prevent break failures of patterned lines and short failures between those patterned lines.
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