Semiconductor device
    6.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US06819613B2

    公开(公告)日:2004-11-16

    申请号:US10692811

    申请日:2003-10-27

    IPC分类号: G11C700

    摘要: A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

    摘要翻译: 一种读出放大器即使在存储器阵列电压降低的情况下,也能够使用来自存储单元的微小信号,以较低的功耗进行高速数据检测操作。 用于过驱动的多个驱动开关被分布地布置在感测放大器区域中,并且用于恢复操作的多个驱动开关被集中地布置在一行的读出放大器的一端。 使用网状电力线电路提供过驱动的可能性。 通过使用用于过驱动的驱动开关,可以利用具有大于数据线幅度的电压的数据线对执行初始感测操作,从而实现高速感测操作。 驱动器的分布布置使得用于过驱动的驱动器能够在感测操作中分散地提供电流,从而减小感测放大器的远和近位置的感测电压的差异。

    Ferroelectric memory device
    7.
    发明授权

    公开(公告)号:US06545902B2

    公开(公告)日:2003-04-08

    申请号:US09987590

    申请日:2001-11-15

    IPC分类号: G11C1122

    CPC分类号: G11C11/22

    摘要: Since a ferroelectric memory device cannot employ a VCC/2 precharge scheme widely used in DRAM, its array noise and power consumption are large. Further, a ferroelectric capacitor is deteriorated in its characteristics due to its fatigue and imprint. To avoid this, data line pairs are precharged to two voltages VCC and VSS. As a result, a voltage on a data line in a memory cell array MCA varies symmetrically with respect to VCC/2 as its center to thereby reduce the array noise. Further, when early sense and early precharge operations are carried out based on charge sharing between data lines of different precharge voltages, the power consumption can be reduced. Furthermore, when the precharge voltages are switched for respective data lines, reverse and non-reverse polarization are alternately carried out in the ferroelectric capacitor in the memory cell to suppress its fatigue and imprint.

    Semiconductor device
    8.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US07345938B2

    公开(公告)日:2008-03-18

    申请号:US11797984

    申请日:2007-05-09

    IPC分类号: G11C7/00

    摘要: A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

    摘要翻译: 一种读出放大器即使在存储器阵列电压降低的情况下,也能够使用来自存储单元的微小信号,以较低的功耗进行高速数据检测操作。 用于过驱动的多个驱动开关被分布地布置在感测放大器区域中,并且用于恢复操作的多个驱动开关被集中地布置在一行的读出放大器的一端。 使用网状电力线电路提供过驱动的可能性。 通过使用用于过驱动的驱动开关,可以利用具有大于数据线幅度的电压的数据线对执行初始感测操作,从而实现高速感测操作。 驱动器的分布布置使得用于过驱动的驱动器能够在感测操作中分散地提供电流,从而减小感测放大器的远和近位置的感测电压的差异。

    Semiconductor memory device with over-driving sense amplifier
    10.
    发明授权
    Semiconductor memory device with over-driving sense amplifier 失效
    具有过驱动读出放大器的半导体存储器件

    公开(公告)号:US06477100B2

    公开(公告)日:2002-11-05

    申请号:US09933815

    申请日:2001-08-22

    IPC分类号: G11C700

    摘要: A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.

    摘要翻译: 一种读出放大器即使在存储器阵列电压降低的情况下,也能够使用来自存储单元的微小信号,以较低的功耗进行高速数据检测操作。 用于过驱动的多个驱动开关被分布地布置在感测放大器区域中,并且用于恢复操作的多个驱动开关被集中地布置在一行的读出放大器的一端。 使用网状电力线电路提供过驱动的可能性。 通过使用用于过驱动的驱动开关,可以利用具有大于数据线幅度的电压的数据线对执行初始感测操作,从而实现高速感测操作。 驱动器的分布布置使得用于过驱动的驱动器能够在感测操作中分散地提供电流,从而减小感测放大器的远和近位置的感测电压的差异。