发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US08459831申请日： 1995-06-02
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公开(公告)号： US06498376B1公开(公告)日： 2002-12-24
- 发明人: Masanori Miyagi , Haruo Konishi , Kazuaki Kubo , Yoshikazu Kojima , Toru Shimizu , Yutaka Saitoh , Toru Machida , Tetsuya Kaneko
- 申请人： Masanori Miyagi , Haruo Konishi , Kazuaki Kubo , Yoshikazu Kojima , Toru Shimizu , Yutaka Saitoh , Toru Machida , Tetsuya Kaneko
- 优先权： JP6-122872 19940603; JP7-015419 19950201; JP7-015421 19950201; JP7-097227 19950421; JP7-113447 19950511
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A MISFET is provided with a segmented channel comprising regions in which the channel is inverted by a first gate voltage and regions in which the channel is inverted by a second gate voltage. The MISFET is formed in a semiconductor substrate having a first conductivity type and the first inversion region of the channel has a first impurity concentration determined by the surface concentration of the substrate. The second inversion region of the channel has a second impurity concentration determined by doping an impurity to the region selected by a photolithographic process. The first and second inversion regions may be divided into a plurality of plane shapes and the threshold voltage of the MISFET is set to a desired value in accordance with the plane area ratio of the first and second inversion regions.